Numerical evidence of spontaneous division of dissipative solitons in a planar gas discharge-semiconductor system

This work deals with the formation of patterns of spatially localized solitary objects in a planar semiconductor gas-discharge system with a high Ohmic electrode. These objects, known as dissipative solitons, are generated in this system in the form of self-organized current filaments, which develop from the homogeneous stationary state by the Turing bifurcation. The numerical model reveals, for the first time, evidence of spontaneous division of the current filaments in this system, similar to that observed in the experiment, in the physically relevant parameter regime.


Optoelectronic properties of Tl3InSe4 single crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2010-01-01)
The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-voltage characteristics, absorption spectra and temperature- and illumination-dependent photoconductivity of Tl3InSe4 single crystals were investigated. Tl3InSe4 crystallises in a body-centred lattice with tetragonal symmetry and belongs to the space group [image omitted]. The crystals are extrinsic p-type semiconductors and exhibit a conductivity conversion from p- to n-type at a critical temperature, Tc, of 283...
Experimental study on the velocity limits of magnetized rotating plasmas
Teodorescu, C.; Clary, R.; Ellis, R. F.; Hassam, A. B.; Lunsford, R.; Uzun Kaymak, İlker Ümit; Young, W. C. (AIP Publishing, 2008-04-01)
An experimental study on the physical limits of the rotation velocity of magnetized plasmas is presented. Experiments are performed in the Maryland Centrifugal Experiment (MCX) [R. F. Ellis , Phys. Plasmas 12, 055704 (2005)], a mirror magnetic field plasma rotating azimuthally. The externally applied parameters that control the plasma characteristics-applied voltage, external magnetic field, and fill pressure-are scanned across the entire available range of values. It is found that the plasma rotation veloc...
Three-dimensional numerical modelling of temporal and spatial pattern formation in a dc-driven gas discharge-semiconductor system
Rafatov, İsmail (IOP Publishing, 2016-12-01)
A three-dimensional numerical model is developed and applied to study the temporal and spatial pattern formation in the planar layered system, consisting of a glow discharge layer, coupled to a high ohmic semiconductor layer. The whole system is sandwiched between two planar electrodes, to which a dc voltage is applied.
Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2007-01-01)
Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the c...
Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2008-01-01)
The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of...
Citation Formats
İ. Rafatov, “Numerical evidence of spontaneous division of dissipative solitons in a planar gas discharge-semiconductor system,” PHYSICS OF PLASMAS, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: