Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces

Date

2001-06-30

Author

Salman, SA
Katırcıoğlu, Şenay
Erkoc, S

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We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double layer stepped Si(100) surfaces by Empirical Tight Binding (ETB) method. The total electronic energies of the H,O-S-A, D-A, D-B type stepped Si(100) systems are calculated with limited number of hydrogen and oxygen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of hydrogenation and oxidation.

Subject Keywords

Vicinal SI(001) surfaces, Group IV semiconductors, Gas-source growth, Water-adsorption, Stress domains, H2O, Silicon, SI(111), SI, Equilibrium

URI

https://hdl.handle.net/11511/47335

Journal

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

DOI

https://doi.org/10.1142/s021797920100632x

Collections

Department of Physics, Article

Citation Formats

S. Salman, Ş. Katırcıoğlu, and S. Erkoc, “Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces,” INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol. 15, no. 16, pp. 2261–2274, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47335.