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Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces
Date
2001-06-30
Author
Salman, SA
Katırcıoğlu, Şenay
Erkoc, S
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double layer stepped Si(100) surfaces by Empirical Tight Binding (ETB) method. The total electronic energies of the H,O-S-A, D-A, D-B type stepped Si(100) systems are calculated with limited number of hydrogen and oxygen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of hydrogenation and oxidation.
Subject Keywords
Vicinal SI(001) surfaces
,
Group IV semiconductors
,
Gas-source growth
,
Water-adsorption
,
Stress domains
,
H2O
,
Silicon
,
SI(111)
,
SI
,
Equilibrium
URI
https://hdl.handle.net/11511/47335
Journal
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
DOI
https://doi.org/10.1142/s021797920100632x
Collections
Department of Physics, Article