Adsorption of oxygen and hydrogen on stepped Si(100) surface

Date

1999-06-01

Author

Salman, SA
Katırcıoğlu, Şenay

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We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.

Subject Keywords

Scanning Tunneling Microscopy, Silicon surfaces, Sı(001) Surfaces, Vicinal Sı(100), Water-Adsorptıon, Total Energy, Sı Surfaces, H2o, Growth, Reconstruction

URI

https://hdl.handle.net/11511/48298

Journal

PHYSICA STATUS SOLIDI B-BASIC RESEARCH

DOI

https://doi.org/10.1002/(sici)1521-3951(199906)213:2<333::aid-pssb333>3.0.co;2-#

Collections

Department of Physics, Article

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Citation Formats

S. Salman and Ş. Katırcıoğlu, “Adsorption of oxygen and hydrogen on stepped Si(100) surface,” PHYSICA STATUS SOLIDI B-BASIC RESEARCH, pp. 333–341, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48298.