Electronic band structure of stepped Si(100) surfaces

2001-02-01
Salman, SA
Katırcıoğlu, Şenay
Erkoc, S
We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.
SURFACE REVIEW AND LETTERS

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Citation Formats
S. Salman, Ş. Katırcıoğlu, and S. Erkoc, “Electronic band structure of stepped Si(100) surfaces,” SURFACE REVIEW AND LETTERS, pp. 61–66, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34304.