Electronic band structure of stepped Si(100) surfaces

Date

2001-02-01

Author

Salman, SA
Katırcıoğlu, Şenay
Erkoc, S

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We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.

Subject Keywords

SCANNING TUNNELING MICROSCOPY, SI(001), STRESS

URI

https://hdl.handle.net/11511/34304

Journal

SURFACE REVIEW AND LETTERS

DOI

https://doi.org/10.1016/s0218-625x(01)00083-5

Collections

Department of Physics, Article

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Citation Formats

S. Salman, Ş. Katırcıoğlu, and S. Erkoc, “Electronic band structure of stepped Si(100) surfaces,” SURFACE REVIEW AND LETTERS, pp. 61–66, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34304.