Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Electronic band structure of stepped Si(100) surfaces
Date
2001-02-01
Author
Salman, SA
Katırcıoğlu, Şenay
Erkoc, S
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
207
views
0
downloads
Cite This
We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.
Subject Keywords
SCANNING TUNNELING MICROSCOPY
,
SI(001)
,
STRESS
URI
https://hdl.handle.net/11511/34304
Journal
SURFACE REVIEW AND LETTERS
DOI
https://doi.org/10.1016/s0218-625x(01)00083-5
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Adsorption of oxygen and hydrogen on stepped Si(100) surface
Salman, SA; Katırcıoğlu, Şenay (1999-06-01)
We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.
Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces
Salman, SA; Katırcıoğlu, Şenay; Erkoc, S (2001-06-30)
We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double layer stepped Si(100) surfaces by Empirical Tight Binding (ETB) method. The total electronic energies of the H,O-S-A, D-A, D-B type stepped Si(100) systems are calculated with limited number of hydrogen and oxygen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of hydrogenation and oxidation.
SIMULATION CALCULATIONS FOR GOLD CLUSTERS ON THE GAAS(110) SURFACE
Erkoç, Şakir; HALICIOGLU, T; TILLER, WA (1992-08-15)
Energy- and structure-related properties of small gold clusters deposited on the GaAs(110) surface were investigated in this work using a molecular dynamics procedure. A recently developed potential energy function based on two- and three-body interactions was employed in calculating energies and forces. These calculations produced some consistent results with experiments. The three-body interactions involving As atoms in particular, were found to play an important role in determining favorable binding site...
Computation of transient thermal stresses in elastic-plastic tubes: Effect of coupling and temperature-dependent physical properties
Eraslan, Ahmet Nedim (2002-06-01)
The objective of this study is to obtain the transient solution of the thermoelastic-plastic deformation of internal heat-generating tubes by considering the thermomechanical coupling effect and the temperature-dependent physical properties of the material. The previously developed steady-state model describing the elastic-plastic behavior of the tubes is modified to obtain the transient solution. The propagation of the elastic-plastic interface for a given heat load is obtained; and the corresponding stres...
STRUCTURAL STABILITY AND ENERGETICS OF SI4 ISOMERS - TOTAL ELECTRONIC-ENERGY CALCULATION
Katırcıoğlu, Şenay (Elsevier BV, 1991-09-20)
The structural stability and energetics of Si4 isomers have been investigated by using an empirical tight-binding (ETB) method. It has been found that the most stable Si4 microcluster is an exact tetrahedron with T(d) symmetry.
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
S. Salman, Ş. Katırcıoğlu, and S. Erkoc, “Electronic band structure of stepped Si(100) surfaces,”
SURFACE REVIEW AND LETTERS
, pp. 61–66, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34304.