Numerical analysis of long wavelength infrared HgCdTe photodiodes

Date

2012-01-01

Author

Kocer, H.
Arslan, Y.
Beşikci, Cengiz

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We present a detailed investigation of the performance limiting factors of long and very long wavelength infrared (LWIR and VLWIR) p on n Hg1-xCdxTe detectors through numerical simulations at 77 K incorporating all considerable generation-recombination (G-R) mechanisms including trap assisted tunneling (TAT), Shockley-Read-Hall (SRH), Auger and radiative processes. The results identify the relative strengths of the dark current generation mechanisms by numerically extracting the contribution of each G-R mechanism to the detector characteristics with various cut-off wavelengths (lambda(c)) and practically achievable material parameters.

Subject Keywords

HgCdTe, Photodetector, TAT

URI

https://hdl.handle.net/11511/47386

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Department of Electrical and Electronics Engineering, Article