Numerical analysis of long wavelength infrared HgCdTe photodiodes

Date

2012-01-01

Author

Kocer, H.
Arslan, Y.
Beşikci, Cengiz

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We present a detailed investigation of the performance limiting factors of long and very long wavelength infrared (LWIR and VLWIR) p on n Hg1-xCdxTe detectors through numerical simulations at 77 K incorporating all considerable generation-recombination (G-R) mechanisms including trap assisted tunneling (TAT), Shockley-Read-Hall (SRH), Auger and radiative processes. The results identify the relative strengths of the dark current generation mechanisms by numerically extracting the contribution of each G-R mechanism to the detector characteristics with various cut-off wavelengths (lambda(c)) and practically achievable material parameters.

Subject Keywords

HgCdTe, Photodetector, TAT

URI

https://hdl.handle.net/11511/47386

Journal

INFRARED PHYSICS & TECHNOLOGY

DOI

https://doi.org/10.1016/j.infrared.2011.09.002

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

H. Kocer, Y. Arslan, and C. Beşikci, “Numerical analysis of long wavelength infrared HgCdTe photodiodes,” INFRARED PHYSICS & TECHNOLOGY, pp. 49–55, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47386.