Adsorption sites of the products of GeH4 on asymmetric Si(100)(2 x 1) surface

Date

2004-03-30

Author

Katırcıoğlu, Şenay

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The decomposition of GeH4 on Si(100)(2 x 1) was investigated on different adsorption models of fragments using density functional theory method. The most probable adsorption model of fragments corresponding to the growth steps of SiGe film has been obtained by geometry optimization and single value total energy calculations. The relative adsorption energies of GeH3, GeH2 and GeH have been found to be -5.6, -5.1, and -4.5 eV for their most probable adsorption models respectively. It has been found that, the asymmetric dimer bond rows of Ge on Si(100) surface can be constructed by following the adsorption models corresponding to the relative adsorption energies of GeH3, GeH2 and GeH.

Subject Keywords

Statistical and Nonlinear Physics, Condensed Matter Physics

URI

https://hdl.handle.net/11511/47445

Journal

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

DOI

https://doi.org/10.1142/s0217979204024033

Collections

Department of Physics, Article

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Citation Formats

Ş. Katırcıoğlu, “Adsorption sites of the products of GeH4 on asymmetric Si(100)(2 x 1) surface,” INTERNATIONAL JOURNAL OF MODERN PHYSICS B, pp. 1191–1202, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47445.