Crystal data and some physical properties of Tl2InGaTe4 crystals

Date

2007-08-01

Author

Qasrawi, A. F.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

149
views

0
downloads

The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl2InGaTe4 crystals are reported for the first time. The X-ray diffraction technique has revealed that Tl(2)lnGaTe(4) is a single phase crystal of tetragonal body-centered structure belonging to the D-4H(18) - I4mcm space group. A Debye temperature of 124 K is calculated from the results of the X-ray data. The current-voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n-type conduction with an electrical resistivity, electron density and Hall mobility of 2.49x 10(3) Omega cm, 4.76x 10(12) cm(-3) and 527 cm V-2(-1) s(-1), respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 cV.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/44475

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200710909

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Crystal data and indirect optical transitions in Tl2InGaSe4 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2008-06-03) The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the tempera...
Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2006-02-01) The conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0...
Photoelectronic and electrical properties of CuIn5S8 single crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2003-01-01) To identify the impurity levels in CuIn5S8 single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50-460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region ...
Crystal data, photoconductivity and carrier scattering mechanisms in CuIn5S8 single crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2001-01-01) The X-ray diffraction has revealed that CuIn5S8 is a single phase crystal of cubic spinet structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn5S8 crystals are measured in the temperature range of 50-400 K. The crysta...
Energy band gap and oscillator parameters of Ga4Se3S single crystals Qasrawi, A. F.; Hasanlı, Nızamı (Elsevier BV, 2007-06-01) The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 a...

Citation Formats

A. F. Qasrawi and N. Hasanlı, “Crystal data and some physical properties of Tl2InGaTe4 crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 807–811, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44475.