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PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS

1992-01-01
ELKAWNI, MI
Tomak, Mehmet
The spectral dependence of the photoionization cross-section is calculated for shallow donors in GaAs/GaAlAs heterojunctions. The resulting spectra is found to be different for light polarized along and perpendicular to the growth direction. The calculations are repeated for both infinite- and finite-barrier models.