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PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS
Date
1992-01-01
Author
ELKAWNI, MI
Tomak, Mehmet
Metadata
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The spectral dependence of the photoionization cross-section is calculated for shallow donors in GaAs/GaAlAs heterojunctions. The resulting spectra is found to be different for light polarized along and perpendicular to the growth direction. The calculations are repeated for both infinite- and finite-barrier models.
Subject Keywords
Quantum wells
,
Heterostructures
URI
https://hdl.handle.net/11511/47189
Journal
SURFACE SCIENCE
DOI
https://doi.org/10.1016/0039-6028(92)90047-a
Collections
Department of Physics, Article
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The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.
PHOTOIONIZATION OF IMPURITIES IN QUANTUM-WELLS
ELSAID, M; Tomak, Mehmet (1992-06-01)
The dependence of photoionization cross-section on photon energy is calculated for shallow donors in quantum wells. The resulting spectra is completely different for light polarized along and perpendicular to the growth direction.
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M. ELKAWNI and M. Tomak, “PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS,”
SURFACE SCIENCE
, pp. 319–322, 1992, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47189.