PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS

Date

1992-01-01

Author

ELKAWNI, MI
Tomak, Mehmet

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The spectral dependence of the photoionization cross-section is calculated for shallow donors in GaAs/GaAlAs heterojunctions. The resulting spectra is found to be different for light polarized along and perpendicular to the growth direction. The calculations are repeated for both infinite- and finite-barrier models.

Subject Keywords

Quantum wells, Heterostructures

URI

https://hdl.handle.net/11511/47189

Journal

SURFACE SCIENCE

DOI

https://doi.org/10.1016/0039-6028(92)90047-a

Collections

Department of Physics, Article

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PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS ELSAID, M; Tomak, Mehmet (1991-01-01) The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.
PHOTOIONIZATION OF IMPURITIES IN QUANTUM-WELLS ELSAID, M; Tomak, Mehmet (1992-06-01) The dependence of photoionization cross-section on photon energy is calculated for shallow donors in quantum wells. The resulting spectra is completely different for light polarized along and perpendicular to the growth direction.
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Citation Formats

M. ELKAWNI and M. Tomak, “PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS,” SURFACE SCIENCE, pp. 319–322, 1992, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47189.