Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1-x) (0.25 <= x <= 1) layered mixed crystals

Date

2010-11-01

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

220
views

0
downloads

The optical properties of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) have been studied at room temperature through the transmittance and reflectivity measurements in the wavelength range of 400-1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependencies of refractive index dispersion parameters: oscillator energy, dispersion energy and zero-frequency refractive index were revealed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/47677

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.201000294

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) Hasanlı, Nızamı (Wiley, 2010-05-01) The optical properties of the TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS2xSe2(1-x) mixed crystals. The transmission measurements carried out in the temperature range of 10-300 K reve...
Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals Hasanlı, Nızamı (Wiley, 2003-01-01) The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 less than or equal to x less than or equal to 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of t...
Effects of annealing on structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using sintered stoichometric powder KARAAĞAÇ, HAKAN; Parlak, Mehmet (Wiley, 2009-04-01) The structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450-600 degrees C. X-ray diffraction (X-RD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 degrees C with mixed binary phases of Ga2Se3, Ga2S3, ternary phase of AgGaS2 and single phase of S. The compositional analysis with the energy disp...
Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures BACAKSIZ, EMİN; ALTUNBAŞ, MUSTAFA; Yflniaz, S.; Tornakin, M.; Parlak, Mehmet (Wiley, 2007-09-01) The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 degrees C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/...
Influence of photonic excitations on the electrical parameters of TlInS2 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2010-04-01) The photo-excitation effect on the current transport mechanism in TlInS2 crystals has been studied by means of dark and illuminated conductivity measurements. The temperature-dependent electrical conductivity analysis in the temperature region of 110-340 K revealed the domination of the thermionic emission and the thermally assisted variable range hopping (VRH) of charge carriers above and below 160 K, respectively. Above 160 K, the conductivity activation energies in the dark are found to be 0.28 and 0.15 ...

Citation Formats

N. Hasanlı, “Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1-x) (0.25 <= x <= 1) layered mixed crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 1141–1144, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47677.