Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Date

2007-09-01

Author

BACAKSIZ, EMİN
ALTUNBAŞ, MUSTAFA
Yflniaz, S.
Tornakin, M.
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

253
views

0
downloads

The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 degrees C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, E-g, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 degrees C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly for the CdCl2/treated was observed.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/46961

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200710957

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effects of annealing on structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using sintered stoichometric powder KARAAĞAÇ, HAKAN; Parlak, Mehmet (Wiley, 2009-04-01) The structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450-600 degrees C. X-ray diffraction (X-RD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 degrees C with mixed binary phases of Ga2Se3, Ga2S3, ternary phase of AgGaS2 and single phase of S. The compositional analysis with the energy disp...
Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1-x) (0.25 <= x <= 1) layered mixed crystals Hasanlı, Nızamı (Wiley, 2010-11-01) The optical properties of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) have been studied at room temperature through the transmittance and reflectivity measurements in the wavelength range of 400-1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependencies of refractive index dispersion parameters: oscil...
Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals Hasanlı, Nızamı (Wiley, 2003-01-01) The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 less than or equal to x less than or equal to 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of t...
Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) Hasanlı, Nızamı (Wiley, 2010-05-01) The optical properties of the TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS2xSe2(1-x) mixed crystals. The transmission measurements carried out in the temperature range of 10-300 K reve...
Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals KARABULUT, ORHAN; Parlak, Mehmet; Turan, Raşit; SERİNCAN, UĞUR; Akınoğlu, Bülent Gültekin (Wiley, 2006-03-01) The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increa...

Citation Formats

E. BACAKSIZ, M. ALTUNBAŞ, S. Yflniaz, M. Tornakin, and M. Parlak, “Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 890–894, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46961.