Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1)

Date

2010-05-01

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

175
views

0
downloads

The optical properties of the TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS2xSe2(1-x) mixed crystals. The transmission measurements carried out in the temperature range of 10-300 K revealed that the rates of change of the indirect band gaps with temperature are gamma = -9.2x10(-4) eV/K, -6.1x10(-4) eV/K, -4.7x10(-4) eV/K and -5.6x10(-4) eV/K for TlInS2, TlInS1.5Se0.5, TlInSSe and TlInS0.5Se1.5 crystals, respectively. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/47687

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200900653

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1-x) (0.25 <= x <= 1) layered mixed crystals Hasanlı, Nızamı (Wiley, 2010-11-01) The optical properties of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) have been studied at room temperature through the transmittance and reflectivity measurements in the wavelength range of 400-1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependencies of refractive index dispersion parameters: oscil...
Effects of annealing on structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using sintered stoichometric powder KARAAĞAÇ, HAKAN; Parlak, Mehmet (Wiley, 2009-04-01) The structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450-600 degrees C. X-ray diffraction (X-RD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 degrees C with mixed binary phases of Ga2Se3, Ga2S3, ternary phase of AgGaS2 and single phase of S. The compositional analysis with the energy disp...
Influence of photonic excitations on the electrical parameters of TlInS2 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2010-04-01) The photo-excitation effect on the current transport mechanism in TlInS2 crystals has been studied by means of dark and illuminated conductivity measurements. The temperature-dependent electrical conductivity analysis in the temperature region of 110-340 K revealed the domination of the thermionic emission and the thermally assisted variable range hopping (VRH) of charge carriers above and below 160 K, respectively. Above 160 K, the conductivity activation energies in the dark are found to be 0.28 and 0.15 ...
Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals Hasanlı, Nızamı (Wiley, 2003-01-01) The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 less than or equal to x less than or equal to 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of t...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...

Citation Formats

N. Hasanlı, “Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1),” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 525–528, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47687.