Properties of reactive O-2 ion beam sputtered TiO2 on Si wafers

Date

2005-02-01

Author

Ulucan, S
Aygun, G
Ozyuzer, L
Egilmez, M
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

185
views

0
downloads

Tio(2) thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O-2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of Tio(2) were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400-4000 cm(-1). An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited Tio(2), the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of Tio(2) are discussed.

Subject Keywords

CMOS, Ion beam deposition, TiO2

URI

https://hdl.handle.net/11511/53531

Journal

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Mechanism Studies on CVD of Boron Carbide from a Gas Mixture of BCl3, CH4, and H-2 in a Dual Impinging-jet Reactor Karaman, Mustafa; Sezgi, Naime Aslı; Doğu, Timur; Ozbelge, Hilmi Onder (2009-03-01) Nearly pure boron carbide free from impurities was produced on a tungsten substrate in a dual impinging-jet chemical vapor deposition reactor from a BCl3, CH4, and H-2 mixture. The Fourier Tran form Infrared (FTIR) analysis proved the formation Of reaction intermediate BHCl2, which is proposed to occur mainly in the gaseous boundary layer next to the substrate surface. Among a large number of reaction mechanisms proposed only the ones considering the molecular adsorption of boron carbide on the substrate su...
Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3 Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; KOCABAŞ, COŞKUN; AYDINLI, ATİLLA (2012-04-27) We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the A...
Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials Wolowski, J.; Badziak, J.; Czarnecka, A.; Parys, P.; Pisarek, M.; Rosinski, M.; Turan, Raşit; Yerci, Selçuk (2008-01-01) This work reports experiment concerning specific applications of implantation of laser-produced ions for production of semiconductor nanocrystals. The investigation was carried out in the IPPLM within the EC STREP 'SEMINANO' project. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 mu m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced ions was performed with the use of 'time-of-flight' io...
Kinetic investigation of chemical vapor deposition of B4C on tungsten substrate Karaman, Mustafa; Sezgi, Naime Aslı; Doğu, Timur; Ozbelge, H. Onder (2006-12-01) Production of beta-rhombohedral boron carbide (B4C) on a tungsten substrate by the chemical vapor deposition from a BCl3-H-2-CH4 gas mixture was achieved. An impinging-jet reactor was used to minimize the mass-transfer limitations on the reaction kinetics, which made a detailed kinetic investigation possible. Results of the XRD and XPS analyses showed that the solid product formed on the substrate is a rhombohedral B4C phase. Both dichloroborane and boron carbide formation rates were found to increase with ...
FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS HOSSEINI, AREZOO; GÜLLÜ, HASAN HÜSEYİN; COŞKUN, EMRE; Parlak, Mehmet; Erçelebi, Ayşe Çiğdem (2019-07-01) Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO(2 )film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV-visual (UV-Vis) spectral and dark curre...

Citation Formats

S. Ulucan, G. Aygun, L. Ozyuzer, M. Egilmez, and R. Turan, “Properties of reactive O-2 ion beam sputtered TiO2 on Si wafers,” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, pp. 297–300, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53531.