Magnetization Studied as a Function of Temperature and Magnetic Field for Ferromagnetic Transition in DMNaFe

Download

10.1007:s11664-020-08395-1.pdf

Date

2020-08-01

Author

Kilit Dogan, E.
Yurtseven, Hasan Hamit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

312
views

198
downloads

Magnetization has been calculated as a function of temperature in the ferromagnetic phase of (CH3)(2)NH2Na0.5Fe0.5(HCOO)(3)denoted by DMNaFe as one of the metal formate framework by using molecular field theory. CalculatedM(T) is compared with the magnetization measured as a function of temperature (H = 10 Oe) in field-cooling and zero-field-cooling regimes from the literature, and a power-law analysis of the experimental data was performed for DMNaFe. Magnetization measured as a function of the magnetic field, as reported in the literature, has also been analyzed by the power-law formula. The magnetization indicates a weak first-order (or nearly second-order) ferromagnetic transition in DMNaFe.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Ferromagnetic transition, Magnetization, DMNaFe

URI

https://hdl.handle.net/11511/46604

Journal

JOURNAL OF ELECTRONIC MATERIALS

DOI

https://doi.org/10.1007/s11664-020-08395-1

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01) The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01) Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Phonon dispersions and elastic constants of disordered Pd-Ni alloys Kart, SO; Tomak, Mehmet; Cagin, T (Elsevier BV, 2005-01-31) Phonon frequencies of Pd-Ni alloys are calculated by molecular dynamics (MD) simulation. Lattice dynamical properties computed from Sutton-Chen (SC) and quantum Sutton-Chen (Q-SC) potentials as a function of temperature are compared with each other. We present all interatomic force constants up to the 8th nearest-neighbor shell obtained by using the calculated potential. Elastic constants evaluated by two methods are consistent with each other. The transferability of the potential is also tested. The result...
Optoelectronic and electrical properties of TlGaS2 single crystal Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2005-10-01) The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static r...
Photoelectronic and electrical properties of InS crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01) To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...

Citation Formats

E. Kilit Dogan and H. H. Yurtseven, “Magnetization Studied as a Function of Temperature and Magnetic Field for Ferromagnetic Transition in DMNaFe,” JOURNAL OF ELECTRONIC MATERIALS, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46604.