Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Photoelectronic and electrical properties of CuIn5S8 single crystals
Date
2003-01-01
Author
Qasrawi, AF
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
231
views
0
downloads
Cite This
To identify the impurity levels in CuIn5S8 single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50-460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent-illumination intensity dependence (F) follows the law I(ph)alphaF(gamma), with gamma being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, tau(n), is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, tau(n) decrease with decreasing illumination intensity. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subject Keywords
General Materials Science
,
General Chemistry
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/48017
Journal
CRYSTAL RESEARCH AND TECHNOLOGY
DOI
https://doi.org/10.1002/crat.200310137
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2006-02-01)
The conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0...
Light illumination effect on the electrical and photovoltaic properties of In6S7 crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2006-05-17)
The electrical and photoelectrical properties of In6S7 crystals have been investigated in the temperature regions of 170-300 K and 150-300 K, respectively. The dark electrical analysis revealed the intrinsic type of conduction. The energy band gap obtained from the temperature-dependent dark current is found to be 0.75 eV. It is observed that the photocurrent increases in the temperature range of 150 K up to T-m = 230 K and decreases at T > T-m. Two photoconductivity activation energies of 0.21 and 0.10 eV ...
Thermally stimulated current measurements in undoped Ga3InSe4 single crystals
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2011-06-01)
The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonabl...
Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals
Goksen, K.; Hasanlı, Nızamı (Elsevier BV, 2008-10-01)
Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl4In3GaS8-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52eV, respectively. The rate of change of the indirect band gap with temperature dE(gi)/dT = -6.0 x 10(-4) eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero valu...
Reflectance spectra and refractive index of a Nd : YAG laser-oxidized Si surface
Aygun, G; Atanassova, E; Turan, Raşit; Babeva, T (Elsevier BV, 2005-02-15)
The reflectance spectra and refractive index of Nd:YAG laser-oxidized SiO2 layers with thicknesses from 15 to 75 nm have been investigated with respect to the laser beam energy density and substrate temperature. Thickness and refractive index of films have been determined from reflectance measurements at normal light incidence in the spectral range 300-800 nm. It was found that the oxide-growth conditions at higher substrate temperatures and laser powers greater than 3.36 J cm(-2) provides a better film qua...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
A. Qasrawi and N. Hasanlı, “Photoelectronic and electrical properties of CuIn5S8 single crystals,”
CRYSTAL RESEARCH AND TECHNOLOGY
, pp. 1063–1070, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48017.