Improved diode properties in zinc telluride thin film-silicon nanowire heterojunctions

2015-04-13
AKSOY, FUNDA
AKGÜL, GÜVENÇ
Gullu, Hasan Huseyin
Ünalan, Hüsnü Emrah
Turan, Raşit
In this study, structural and optoelectronic properties and photodedection characteristics of diodes constructed from p-zinc telluride (ZnTe) thin film/n-silicon (Si) nanowire heterojunctions are reported. Dense arrays of vertically aligned Si nanowires were successfully synthesized on (110)-oriented n-type single crystalline Si wafer using simple and inexpensive metal-assisted etching (MAE) process. Following the nanowire synthesis, p-type ZnTe thin films were deposited onto vertically oriented Si nanowires via radio frequency magnetron sputtering to form three-dimensional heterojunctions. A comparative study of the structural results obtained from X-ray diffraction and Raman spectroscopy measurements showed the improved crystallinity of the ZnTe thin films deposited onto the Si nanowire arrays. The fabricated nanowire-based heterojunction devices exhibited remarkable diode characteristics and enhanced optoelectronic properties and photosensitivity in comparison to the planar reference. The electrical measurements revealed that the diodes with nanowires had a well-defined rectifying behaviour with a rectification ratio of 10(4) at +/- 2V and a relatively small ideality factor of n=1.8 with lower reverse leakage current and series resistance at room temperature in dark condition. Moreover, an open-circuit voltage of 100mV was also observed under illumination. Based on spectral photoresponsivity measurements, the nanowire-based device exhibited a distinct responsivity and high detectivity in visible and near-infrared (NIR) wavelength regions. The device characteristics observed here offer that the fabricated ZnTe thin film/Si nanowire-based p-n heterojunction structures will find important applications in future and will be a promising candidate for high-performance and low-cost optoelectronic device applications, NIR photodedectors in particular.

Citation Formats
F. AKSOY, G. AKGÜL, H. H. Gullu, H. E. Ünalan, and R. Turan, “Improved diode properties in zinc telluride thin film-silicon nanowire heterojunctions,” PHILOSOPHICAL MAGAZINE, vol. 95, no. 11, pp. 1164–1183, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48096.