Investigation of physical properties of quaternary AgGa0.5In0.5Te2 thin films deposited by thermal evaporation

Date

2010-8

Author

Karaagac, H.
Parlak, Mehmet

Metadata

Show full item record

Item Usage Stats

379
views

0
downloads

The aim of this study is to understand the structural, optical and photo-electrical properties of the quaternary chalcogenide AgGa 0.5In0.5Te2 thin films deposited onto the glass substrates by thermal evaporation of the single crystalline powder. Energy dispersive X-ray analysis (EDXA) showed remarkable change in atomic percentage of the constituent elements after annealing. The X-ray diffraction (XRD) of the films below the annealing temperature of 300°C indicated the polycrystalline structure with co-existence of AgGaTe2 and AgGa0.5In 0.5Te2 phases. However, the single phase of AgGa 0.5In0.5Te2 chalcopyrite structure was obtained at the annealing of 300 °C. The band gap values were calculated in between 1.05 and 1.37 eV depending on annealing temperature. The temperature dependent photoconductivity was measured under different illumination intensity. The nature of existing trap levels were studied by measuring the variation of photocurrent as a function of illumination intensity. The analysis showed that AgGa0.5In0.5Te2 thin film changes its behavior from the sublinear to supralinear photoconductivity after annealing.

Subject Keywords

X-ray diffraction, Photoconduction, Crystal growth, Vacuum deposition, Solar cells

URI

https://hdl.handle.net/11511/28342

Journal

Journal of Alloys and Compounds

DOI

https://doi.org/10.1016/j.jallcom.2010.05.035

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films Coskun, EMRE; Gullu, H. H.; Parlak, Mehmet; Ercelebi, C. (2015-02-01) The structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dep...
Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01) Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode KALELİ, Murat; Parlak, Mehmet; Ercelebi, C. (2011-10-12) In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current-voltage (I-V), and photo-response measurements carried out in the temperature range of 200-360 K. In order to obtain the series resistance (R...
Tuning the electron beam evaporation parameters for the production of hole and electron transport layers for perovskite solar cells Coşar, Mustafa Bura; Özenbaş, Ahmet Macit; Department of Metallurgical and Materials Engineering (2019) This study evaluates the use of electron beam evaporation technique for the deposition of electron and hole transport layers for perovskite solar cells where cell productions were performed in n-i-p structure. NiO and TiO layers were studied for hole transport layer and TiO2 and Nb2O5 layers were deposited for electron transport purposes. To optimize the suitable evaporation parameters for efficient perovskite cell production, single layers of each material were deposited at different conditions of oxygen f...
Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals IŞIK, MEHMET; YILDIRIM, TACETTİN; Hasanlı, Nızamı (2015-07-01) Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trap...

Citation Formats

H. Karaagac and M. Parlak, “Investigation of physical properties of quaternary AgGa0.5In0.5Te2 thin films deposited by thermal evaporation,” Journal of Alloys and Compounds, pp. 468–473, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28342.