Growth and process conditions of aligned and patternable films of iron(III) oxide nanowires by thermal oxidation of iron

Download

Date

2008-11-12

Author

Hiralal, P.
Ünalan, Hüsnü Emrah
Wijayantha, K. G. U.
Kursumovic, A.
Jefferson, D.
MacManus-Driscoll, J. L.
Amaratunga, G. A. J.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

179
views

0
downloads

A simple, catalyst-free growth method for vertically aligned, highly crystalline iron oxide (alpha-Fe2O3) wires and needles is reported. Wires are grown by the thermal oxidation of iron foils. Growth properties are studied as a function of temperature, growth time and oxygen partial pressure. The size, morphology and density of the nanostructures can be controlled by varying growth temperature and time. Oxygen partial pressure shows no effect on the morphology of resulting nanostructures, although the oxide thickness increases with oxygen partial pressure. Additionally, by using sputtered iron films, the possibility of growth and patterning on a range of different substrates is demonstrated. Growth conditions can be adapted to less tolerant substrates by using lower temperatures and longer growth time. The results provide some insight into the mechanism of growth.

Subject Keywords

Mechanical Engineering, Electrical and Electronic Engineering, General Materials Science, Mechanics of Materials, Bioengineering, General Chemistry

URI

https://hdl.handle.net/11511/48185

Journal

NANOTECHNOLOGY

DOI

https://doi.org/10.1088/0957-4484/19/45/455608

Collections

Department of Metallurgical and Materials Engineering, Article

Suggestions

OpenMETU
Core

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires Ozdemir, Baris; Kulakci, Mustafa; Turan, Raşit; Ünalan, Hüsnü Emrah (IOP Publishing, 2011-04-15) Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed ...
Rapid synthesis of aligned zinc oxide nanowires Ünalan, Hüsnü Emrah; Rupesinghe, Nalin; Dalal, Sharvari; Milne, William I.; Amaratunga, Gehan A. J. (IOP Publishing, 2008-06-25) A solution growth approach for zinc oxide (ZnO) nanowires is highly appealing because of the low growth temperature and possibility for large area synthesis. Reported reaction times for ZnO nanowire synthesis, however, are long, spanning from several hours to days. In this work, we report on the rapid synthesis of ZnO nanowires on various substrates (such as poly(ethylene terephthalate) (PET), silicon and glass) using a commercially available microwave oven. The average growth rate of our nanowires is deter...
Fabrication of SiO2-stacked diamond membranes and their characteristics for microelectromechanical applications Bayram, Barış (Elsevier BV, 2011-04-01) Diamond is a promising microelectromechanical systems (MEMS) material due to its high Young's Modulus and very large thermal conductivity. In this work, ultrananocrystalline diamond was stacked between silicon dioxide to form thermally-stable and robust membranes. These SiO2-stacked diamond layers were processed into MEMS-compatible membranes. For comparison, membranes composed of only SiO2 were fabricated as well. The structural characteristics of these membranes are compared and analyzed for membranes of ...
Direct measurement of charge transport through helical poly(ethyl propiolate) nanorods wired into gaps in single walled carbon nanotubes Wang, Nan; Yano, Koji; Durkan, Colm; Plank, Natalie; Welland, Mark E.; Zhang, Yan; Ünalan, Hüsnü Emrah; Mann, Mark; Amaratunga, G. A. J.; Milne, William I. (IOP Publishing, 2009-03-11) We report the direct measurement of electrical transport through rod-like polymer molecules, of poly(ethyl propiolate) (PEP), utilizing single walled carbon nanotubes (SWNTs) as electrodes. The electrical properties of the devices were measured (i) before cutting a SWNT, (ii) when a SWNT was cut and (iii) after PEP deposition into the nanoscale gap in a cut SWNT. The gate-dependent electrical properties showed a reduction in current from I-on = 2.4 x 10(-7) A for SWNT devices to I-on = 3.6 x 10(-9) A for PE...
Sintering and humidity-sensitive behaviour of the ZnCr2O4-K2CrO4 ceramic system Bayhan, M; Hashemi, T; Brinkman, AW (Springer Science and Business Media LLC, 1997-12-15) Solid state reaction at elevated temperatures and the sintering behaviour of zinc chromite formed by zinc oxide and chromite oxide were investigated. Crystalline structure, surface and fractured morphologies and humidity-sensitivity characteristics of ZnCr2O4-K2CrO4-CuO were studied. The fired ceramic body, which proved to be mainly constructed from ZnCr2O4 spinel grains, was porous. The humidity characteristics of the sensor showed that the resistance decreased as a logarithmic function with an increase in...

Citation Formats

P. Hiralal et al., “Growth and process conditions of aligned and patternable films of iron(III) oxide nanowires by thermal oxidation of iron,” NANOTECHNOLOGY, pp. 0–0, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48185.