Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation

Date

2020-01-31

Author

Sedani, Salar H.
Yasar, Ozlen F.
Karaman, Mehmet
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

276
views

0
downloads

In this work, we studied solid-phase crystallization of boron-doped non-hydrogenated amorphous Si films fabricated by electron beam evaporation equipped with effusion cells (e-Beam EC) on silicon nitride coated glass substrates. We investigated the effect of boron doping on the crystallization kinetics through a series of experiments with different boron doping concentrations controlled by the effusion cell temperature. We employed Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, grazing incidence X-ray diffraction, Hall Effect measurement and X-ray photoelectron spectroscopy (XPS) to understand the structural and electrical variations with regard to B doping and process conditions. We found that the stress in the poly-Si thin film increases when the B concentration increases from 10(18) to 10(20) atoms/cm(3), reaching a value of to 1087.5 MPa. We also studied the chemical environment around the B atoms by comparing the B-1s, binding energies in XPS measurements, which revealed that B-Si coordination does not change upon crystallization. The electrical effect of boron doping was observed in a drastic drop in resistivity from orders of 10(2) to the 10(-3) Omega.cm. Moreover, we found that an increase in boron doping concentration leads to a higher crystallization rate of non-hydrogenated amorphous silicon thin films prepared by e-Beam EC.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/48761

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2019.137639

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effects of gold-induced crystallization process on the structural and electrical properties of germanium thin films Kabacelik, Ismail; Kulakci, Mustafa; Turan, Raşit; ÜNAL, NURİ (Wiley, 2018-07-01) Gold-induced (Au-) crystallization of amorphous germanium (-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films ...
Effect of low-energy electron irradiation on (Bi, Pb)-2212 superconductors Ogun, SE; Goktas, H; Ozkan, H; Hasanlı, Nızamı (Elsevier BV, 2005-06-22) The effect of low-energy electron irradiation on the properties of the Bi-based superconductors is studied. Two sets of polycrystalline (Bi, Pb)-2212 samples were synthesized by heating the appropriate mixtures of powders at 840 degrees C for 100 h, then quenched or furnace cooled to room temperature. The samples were irradiated by low-energy (1-10 keV), pulsed (20 ns) electron beam up to a dose of 6.2 x 10(15) cm(-2). X- ray diffraction patterns, resistance-temperature behaviours, critical currents, and mi...
Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films AYGÜN ÖZYÜZER, GÜLNUR; Cantas, Ayten; Simsek, Yilmaz; Turan, Raşit (Elsevier BV, 2011-06-30) HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O-2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. Th...
Electrical and magnetic properties of Si ion implanted YBa2Cu3O7-delta thin films and microbridges Avci, I; Tepe, A; Serincan, U; Oktem, B; Turan, Raşit; Abukay, D (Elsevier BV, 2004-11-01) Fabrication of superconducting bilayer YBa2Cu3O7-delta (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single crystal (100) SrTiO3 substrate by inverted cylindrical magnetron sputtering. The sample was implanted with 100 keV, 1 X 10(16) Si ions/cm(2). Upon implantation with Si, the sample lost its electrical conductivity and diamagnetism while its crystalline structure was preserved after the ann...
Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films Karaman, Mehmet; ÖZMEN, ÖZGE TÜZÜN; Sedani, Salar Habibpur; Ozkol, Engin; Turan, Raşit (Wiley, 2016-12-01) In this work, polycrystalline silicon (poly-Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al-doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly-Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation an...

Citation Formats

S. H. Sedani, O. F. Yasar, M. Karaman, and R. Turan, “Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation,” THIN SOLID FILMS, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48761.