Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

Download

index.pdf

Date

2011-06-30

Author

AYGÜN ÖZYÜZER, GÜLNUR
Cantas, Ayten
Simsek, Yilmaz
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

206
views

0
downloads

HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O-2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O-2/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO2, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/46642

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2010.12.189

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation Sedani, Salar H.; Yasar, Ozlen F.; Karaman, Mehmet; Turan, Raşit (Elsevier BV, 2020-01-31) In this work, we studied solid-phase crystallization of boron-doped non-hydrogenated amorphous Si films fabricated by electron beam evaporation equipped with effusion cells (e-Beam EC) on silicon nitride coated glass substrates. We investigated the effect of boron doping on the crystallization kinetics through a series of experiments with different boron doping concentrations controlled by the effusion cell temperature. We employed Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, grazing ...
Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films Karaman, Mehmet; ÖZMEN, ÖZGE TÜZÜN; Sedani, Salar Habibpur; Ozkol, Engin; Turan, Raşit (Wiley, 2016-12-01) In this work, polycrystalline silicon (poly-Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al-doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly-Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation an...
Effect of Cd-doping level on the electrical, structural and photoconductivity properties of GaSe thin films Colakoglu, T; Parlak, Mehmet (Elsevier BV, 2005-12-01) GaSe thin films were deposited by thermal evaporation technique with and without Cd doping. X-ray diffraction analysis showed that the crystallinity of doped and undoped films increases in (1014) preferred orientation direction upon annealing. Addition of cadmium dopant with excess selenium in the GaSe structure gives rise to the possibility for the existence of a CdSe phase in the highly Cd-doped samples. The room temperature conductivity and mobility values of the samples were found to be lying in between...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01) The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films Parlak, Mehmet (Elsevier BV, 1998-06-08) X-ray diffraction, scanning electron microscopy, compositional analysis and transmission measurements are performed on InSe thin films grown by thermal evaporation at different substrate and annealing temperatures of 150-250 degrees C and 100-200 degrees C, respectively. An analysis of structural measurements indicates that there exist three phases of In-Se system like InSe, In2Se3 and In6Se7 in the same film at low-substrate temperature, but at high-substrate temperatures, In2Se3 phase was absent. The comp...

Citation Formats

G. AYGÜN ÖZYÜZER, A. Cantas, Y. Simsek, and R. Turan, “Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films,” THIN SOLID FILMS, pp. 5820–5825, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46642.