Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

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2011-06-30

Author

AYGÜN ÖZYÜZER, GÜLNUR
Cantas, Ayten
Simsek, Yilmaz
Turan, Raşit

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HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O-2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O-2/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO2, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/46642

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2010.12.189

Collections

Department of Physics, Article

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Citation Formats

G. AYGÜN ÖZYÜZER, A. Cantas, Y. Simsek, and R. Turan, “Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films,” THIN SOLID FILMS, pp. 5820–5825, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46642.