Optical band gap and dispersion of optical constants of Cu-Ga-S thin films

Date

2019-01-01

Author

Isik, M.
Gullu, H. H.
COŞKUN, EMRE
Hasanlı, Nızamı

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Thermally deposited Cu-Ga-S thin films were optically characterized by means of experimental techniques of transmission measurements. The analyses of transmittance spectra were accomplished by derivative spectrophotometry analyses to get gap energies of thin films. The transmittance spectra of thin films annealed at different temperatures presented interference fringes which were analyzed by Swanepoel envelope method. The wavelength dependencies of optical parameters; refractive index (n), real part of complex dielectric function (epsilon(re)) and extinction coefficient (k) were reported in the weak absorption region. The photon energy dependencies of n and epsilon(re) were analyzed using single-oscillator and Spitzer-Fan models, respectively.

Subject Keywords

Optical properties, I-III-VI type semiconductors, Swanepoel method

URI

https://hdl.handle.net/11511/48961

Journal

OPTIK

DOI

https://doi.org/10.1016/j.ijleo.2019.04.035

Collections

Department of Physics, Article

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Citation Formats

M. Isik, H. H. Gullu, E. COŞKUN, and N. Hasanlı, “Optical band gap and dispersion of optical constants of Cu-Ga-S thin films,” OPTIK, pp. 147–154, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48961.