Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy

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2004-12-01

Author

Altan, Hakan
Federici, JF
Lan, AD
Grebel, H

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We have conducted visible pump-THz (THz-terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed. (C) 2004 American Institute of Physics.

Subject Keywords

Temperature-grown gaas, Carrier dynamics, Ordered array, Conductivity, Scattering

URI

https://hdl.handle.net/11511/49048

Journal

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.1805720

Collections

Department of Physics, Article

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Citation Formats

H. Altan, J. Federici, A. Lan, and H. Grebel, “Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy,” JOURNAL OF APPLIED PHYSICS, pp. 6685–6689, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49048.