Gözenekli si ve ge nanoyapılarının ileri teknoloji güneş gözelerine uygulanması

Download

TVRNeE5qazU.pdf

Date

2014

Author

Aydınlı, Atila
Turan, Raşit
Salihoğlu, Ömer
Bek, Alpan
Sungur, Özen Emel
İlday, Kayacan Serim
Altuntaş, Burcu

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

132
views

126
downloads

Uluslararası ikili işbirliği projesi olan bu çalışmada amaca uygun olarak gözenekli silisyum ve germanyum nanoyapılar silisyum oksit matris içerisinde büyütülmüş ve optoleektronik aygıt üretiminde kullanılmıştır. Söz konusu yapıları elde edebilmek için silisyum ve germanyum-zengin silisyum oksit ince filmler fiziksel yolla buhar depolama yöntemlerinden yararlanarak üretilmiş ve kristal oluşumunu sağlamak için de yüksek sıcaklık fırını, hızlı termal tavlama ve lazer tavlama yöntemleri gibi farklı teknikler kullanılarak tavlanmıştır. Bu sayede farklı boyutlarda nanokristaller oluşturulmuş ve elde edilen yapıların optik band aralığının değişken olması sağlanmıştır. Böylece bu proje ile güneş spektrumundan daha fazla ve daha verimli yararlanmak amaçlı optik band aralığı ayarlanabilir malzemeler üretmiş bulunmaktayız. Öte yandan ürtetilen filmler, aygıt üretiminde gerekli olan elektrik akım geçişini sağlamk açısından da istenen şartları sağlamıştır. Böylece proejnin en önemli hedefi olan kuantum etkileri koruyarak, iletken tabakaların elde edilmesi hedefine ulaşılmıştır. Daha sonra bu yapılar, heteroeklem türü p-n eklemlei üretilmiş ve bu eklemlerin elektro- optik özellikleri belirlenmiştir. Si nanoyapılı örnekler güneş gözesi özellikleri sergilerken, Ge nanoyapılı örnekler de daha çok fotoalgılama yeteneği öne çıkmıştır. Bu çalışma ile ilk defa üretilen ve umut verici sonuçlar veren bu tür aygıtların daha da geliştirilmesi için yeni çalışmaların yürütülmesi gerekmektedir. Proje önerisi 24 ay gibi nispeten kısa bir sürede çok sayıda iş yapmayı hedefleyen bir proje olarak sunulmuştur. Uluslararası bir organizasonu da içeren zorlu bir programı olanproje hedeflerine büyük ölçüde ulaşmıştır. Çok sayıda deney ve çalışma yürütülmüştür. Bu çalışmaların bir özeti bu sonuç raporunda sunulmuştur.

Subject Keywords

Gözenekli silisyum nanoyapılar, Gözenekli germanyum nanoyapılar, Nanomalzemeler, Kuvantum hapsolma, Güneş gözesi, Foto algılayıcı

URI

https://app.trdizin.gov.tr/publication/project/detail/TVRNeE5qazU
https://hdl.handle.net/11511/49648

Collections

Department of Physics, Project and Design

Suggestions

OpenMETU
Core

Fabrication and a complete structural, optical and electrical analysis of porous germanium nanostructures embedded in a dielectric matrix: possibility of third generation solar cell applications Altuntaş, Burcu; Turan, Raşit; Department of Physics (2014) The primary goal of this thesis is to synthesize porous Ge nanostructures embedded in a dielectric matrix and perform a complete structural, optical and electrical characterization. Ge nanostructures can be a good candidate for use in third-generation solar cells, since they are alternative to Si nanostructures owing to their potentially higher photon conversion efficiencies. So far, most of the research is focused on the use of quantum dot structures in photovoltaic applications; although they provide quan...
Strain induction on GE nanobeams by electrostatic actuation Ayan, Arman; Yerci, Selçuk; Department of Electrical and Electronics Engineering (2018) Germanium (Ge) is one of the most promising materials to accomplish the monolithic integration of optics and electronics on the same chip, mainly due to its compatibility with the existing silicon (Si) technology, high charge carrier mobility and high absorption coefficient in the near-infrared region. However, realization of efficient Ge light emitters requires techniques such as tensile strain induction, tin (Sn) incorporation and/or heavy n-type doping to alter its band gap enabling direct transitions. A...
3d-microstructuring of silicon induced by nanosecond pulsed infrared fiber laser for potential solar cell applications BÜLBÜL TATBUL, BESNA; Pavlov, Ihor; Department of Physics (2022-9-02) Laser-induced three-dimensional (3D) structuring of silicon is a highly desired technology as silicon drives the semiconductor industry with its wide range of applications in solar cells, telecommunications, microelectronics, integrated photonics, etc. Structuring of silicon for such applications is typically performed by lithographic pattern production and pattern transfer via plasma etching, reactive ion etching, or chemical etching. However, conventional lithography methods are limited to the surface of ...
Crystallization and phase separation mechanism of silicon oxide thin films fabricated via electron beam evaporation of silicon monoxide Gündüz, Deniz Cihan; Turan, Raşit; Yerci, Selçuk; Department of Micro and Nanotechnology (2015) Silicon nanocrystals (NCs) imbedded in a matrix of silicon oxide have drawn much attention due to their applications in optoelectronic devices and third-generation solar cells. Several methods were reported for the fabrication of Si NCs. Among these techniques, there are aerosol synthesis, chemical vapor deposition, ion implantation, magnetron sputtering and thermal evaporation. However, electron beam evaporation is a straightforward and effective technique for the fabrication of silicon oxide thin films si...
Development of a large area germanium on insulator platform by liquid phase epitaxy Özyurt, Zişan İrem; Yerci, Selçuk; Department of Micro and Nanotechnology (2017) Germanium is a group IV element compatible with CMOS (Complementary metal oxide semiconductor) fabrication technology and advantageous over silicon by having smaller band gap and higher carrier mobility, which provide infrared photodetectors and high-speed transistors respectively. In addition, by having direct band gap, strained-Ge enables fabrication of infrared lasers. Finally, thanks to lattice-matching, Ge layers on Si can also be used as virtual substrates for the growth of III-V compounds on Si. In o...

Citation Formats

A. Aydınlı et al., “Gözenekli si ve ge nanoyapılarının ileri teknoloji güneş gözelerine uygulanması,” 2014. Accessed: 00, 2020. [Online]. Available: https://app.trdizin.gov.tr/publication/project/detail/TVRNeE5qazU.