Polaron effects on the binding energy of a hydrogenic impurity in a semiconductor quantum well

Date

1987-11-30

Author

Ercelebi, A
Sualp, G

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The polaron effect on the ground-state level of a hydrogenic impurity in a semiconductor quantum well is calculated as a function of the well thickness. The formulation is based on an extension of the strong-coupling polaron theory and covers the overall range of the electron-phonon coupling strength. It is observed that in a GaAs-based quantum structure the phonon-induced shift in the binding energy is smaller than that in the bulk case except for too narrow well sizes.

Subject Keywords

General Engineering, General Physics and Astronomy, Condensed Matter Physics, Physics

URI

https://hdl.handle.net/11511/51884

Journal

Journal of Physics C: Solid State Physics

DOI

https://doi.org/10.1088/0022-3719/20/33/009

Collections

Department of Physics, Article

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Citation Formats

A. Ercelebi and G. Sualp, “Polaron effects on the binding energy of a hydrogenic impurity in a semiconductor quantum well,” Journal of Physics C: Solid State Physics, pp. 5517–5526, 1987, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/51884.