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Polaron effects on the binding energy of a hydrogenic impurity in a semiconductor quantum well
Date
1987-11-30
Author
Ercelebi, A
Sualp, G
Metadata
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This work is licensed under a
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The polaron effect on the ground-state level of a hydrogenic impurity in a semiconductor quantum well is calculated as a function of the well thickness. The formulation is based on an extension of the strong-coupling polaron theory and covers the overall range of the electron-phonon coupling strength. It is observed that in a GaAs-based quantum structure the phonon-induced shift in the binding energy is smaller than that in the bulk case except for too narrow well sizes.
Subject Keywords
General Engineering
,
General Physics and Astronomy
,
Condensed Matter Physics
,
Physics
URI
https://hdl.handle.net/11511/51884
Journal
Journal of Physics C: Solid State Physics
DOI
https://doi.org/10.1088/0022-3719/20/33/009
Collections
Department of Physics, Article