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Polaron effects on the binding energy of a hydrogenic impurity in a semiconductor quantum well

1987-11-30
Ercelebi, A
Sualp, G
The polaron effect on the ground-state level of a hydrogenic impurity in a semiconductor quantum well is calculated as a function of the well thickness. The formulation is based on an extension of the strong-coupling polaron theory and covers the overall range of the electron-phonon coupling strength. It is observed that in a GaAs-based quantum structure the phonon-induced shift in the binding energy is smaller than that in the bulk case except for too narrow well sizes.