Polaron effects on the binding energy of a hydrogenic impurity in a semiconductor quantum well

Ercelebi, A
Sualp, G
The polaron effect on the ground-state level of a hydrogenic impurity in a semiconductor quantum well is calculated as a function of the well thickness. The formulation is based on an extension of the strong-coupling polaron theory and covers the overall range of the electron-phonon coupling strength. It is observed that in a GaAs-based quantum structure the phonon-induced shift in the binding energy is smaller than that in the bulk case except for too narrow well sizes.
Journal of Physics C: Solid State Physics


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Citation Formats
A. Ercelebi and G. Sualp, “Polaron effects on the binding energy of a hydrogenic impurity in a semiconductor quantum well,” Journal of Physics C: Solid State Physics, pp. 5517–5526, 1987, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/51884.