The Effect of Thickness and Doping on the Nonlinear Absorption Behaviour of IIIA-VIA Group Amorphous Semiconductor Thin Films

Date

2011-06-30

Author

Kurum, Ulas
YAĞLIOĞLU, HALİME GÜL
YÜKSEK, MUSTAFA
ELMALI, Ayhan
Ates, Aytunc
KARABULUT, MEVLÜT
Mamedov, Gasan M.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

203
views

0
downloads

The nonlinear optical absorption of InSe, GaSe and GaxIn1-xSe amorphous films with varying thickness and doping has been studied by open-aperture Z-scan experiment with 4 ns and 65 ps pulse durations at 1064 nm wavelength and femtosecond pump-probe spectroscopy. Our results show that the dopant and film thickness (from 20 nm to 104 nm) results in switching from saturable absorption to nonlinear absorption for equal input intensities. This behaviour is attributed to increasing localized defect states with increasing film thickness and/or dopant. The experimental curves were fitted to the theory of open aperture Gaussian beam Z-scan based on the Adomian decomposition method incorporating one photon, two photon, and free carrier absorptions and their saturations. By preparing very thin amorphous thin films the saturation threshold has been lowered significantly.

Subject Keywords

Amorphous semiconductor, Thin film, Nonlinear absorption

URI

https://hdl.handle.net/11511/53603

Collections

Department of Physics, Conference / Seminar

Suggestions

OpenMETU
Core

The role of defects on the transition from saturable absorption to nonlinear absorption of Bi12GeO20 single crystal under increasing laser excitation PEPE, YASEMİN; Isik, Mehmet; KARATAY, AHMET; YILDIZ, ELİF; Hasanlı, Nızamı; ELMALI, AYHAN (2022-11-01) © 2022 Elsevier B.V.This work reports defect and input intensity dependent nonlinear optical behaviors of Bi12GeO20 (BGO) single crystal. Open aperture (OA) Z-scan experiments were performed with 532 nm excitation wavelength under 4 ns and 100 fs pulsed laser irradiation. Obtained data were fitted with a theoretical model considering one-photon, two-photon and free carrier absorption contributions to nonlinear absorption due to longer lifetime of localized defect states than that of used laser pulse duratio...
The flow of excitation energy in LHCII monomers: Implications for the structural model of the major plant antenna Gradinaru, CC; Ozdemir, S; Gulen, D; van Stokkum, IHM; van Grondelle, R; van Amerongen, H (1998-12-01) Spectral and kinetic information on energy transfer within the light-harvesting complex II (LHCII) monomer was obtained from this subpicosecond transient absorption study, by using selective excitation (663, 669, 672, 678, and 682 nm) of various Chl a absorption bands and detecting the induced changes over the entire Q(y) region (650 -700 nm). It is shown that transfer from the pigment(s) absorbing around 663 nm to the low energy ones occurs in 5 +/- 1 ps, whereas the 670-nm excitation is delivered to the s...
Numerical and experimental investigation on laser damage threshold of highly reflective multilayer thin films Ocak, Mustafa; Sert, Cüneyt; Okutucu Özyurt, Hanife Tuba; Department of Mechanical Engineering (2016) The laser induced temperature distributions on the optical thin films are investigated in this study. Effects of optical design modifications on thermal performance of highly reflective (HR) multilayer thin films are analyzed. Firstly, a conventional 19 layer HR coating is selected as a reference and the laser induced temperature distribution is evaluated on it. Then, alternative HR designs are developed by employing non-quarter wave layers, over coat (OC) layers and two high index materials in the coating ...
Structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films Gullu, H. H.; IŞIK, MEHMET; Hasanlı, Nızamı (2018-10-15) The structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films were investigated by Xray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM) and optical transmittance measurements. The effect of annealing temperature on the results of applied techniques was also studied in the present paper. EDS results revealed that each of the elements, Cu, Ga and S are presented in the films and Cu and Ga concentration increases whereas S concentration decr...
Experimental investigation of waveform tip injection on the characteristics of the tip vortex Ostovan, Yashar; Uzol, Oğuz; Department of Aerospace Engineering (2011) This study investigates the effect of chordwisely modulated tip injection on the flow and turbulence characteristics of the tip vortex through experimental measurements downstream of a rectangular half-wing that has an aspect ratio of three. This injection technique involves spanwise jets at the tip that are issued from a series of holes along the chord line normal to the freestream flow direction. The injection mass flow rate from each hole is individually controlled using computer driven solenoid valves a...

Citation Formats

U. Kurum et al., “The Effect of Thickness and Doping on the Nonlinear Absorption Behaviour of IIIA-VIA Group Amorphous Semiconductor Thin Films,” 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53603.