Structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films

Gullu, H. H.
Hasanlı, Nızamı
The structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films were investigated by Xray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM) and optical transmittance measurements. The effect of annealing temperature on the results of applied techniques was also studied in the present paper. EDS results revealed that each of the elements, Cu, Ga and S are presented in the films and Cu and Ga concentration increases whereas S concentration decreases within the films as annealing temperature is increased. XRD pattern exhibited four diffraction peaks which are well-matched with those of tetragonal CuGaS2 compound. AFM images were recorded to get knowledge about the surface morphology and roughness of deposited thin films. Transmittance measurements were applied in the wavelength region of 300-1000 nm. Analyses of the absorption coefficient derived from transmittance data resulted in presence of three distinct transition regions in each thin films with direct transition type. Crystal-field and spin-orbit splitting energies existing due to valence band splitting were also calculated using quasicubic model.


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Annealing effects on structural and optical properties of the thermally evaporated Zn-In-Te(ZIT) thin films have been investigated. The structural and the compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDXA). The as-grown and annealed ZIT films had polycrystalline structure and the preferred orientation changed from (220) to (112) direction with increasing annealing temperature. The optical properties and constants were determined by transmi...
Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique
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Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
Citation Formats
H. H. Gullu, M. IŞIK, and N. Hasanlı, “Structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films,” PHYSICA B-CONDENSED MATTER, pp. 92–96, 2018, Accessed: 00, 2020. [Online]. Available: