Subsurface Silicon Processing by Microsphere Focusing of Ultrafast Infrared Laser

Date

2019-01-01

Author

İdikut, Fırat
Seyedpour, S. Esmaeilzad
Bek, Alpan

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

59
views

0
downloads

Attention on applications of femtosecond lasers in semiconductor materials processing is ever growing. There has been an increasing research momentum especially towards multi-photon absorption based silicon (Si) processing with infrared lasers in the last decade. Since Si is transparent at wavelengths >1.1 mu m, the processing inside Si is triggered by the nonlinear optical phenomenon of two or more photon absorption which requires laser amplitude to reach and pass beyond threshold conditions. A method that utilizes back-reflection at the Si-air interface was developed and demonstrated to be useful for subsurface processing of Si at the micro-scale. In previous studies, pixels of such processed regions were limited to 5-10 mu m size despite use of high numerical aperture lenses due to strong refraction of light in Si. In order to deem the laser processing of Si useful for photonic applications, pixel size needed to be reduced down to a micron or below. In this work, we demonstrate subsurface modification of Si using microsphere based focusing of a 1.5 mu m wavelength ultrafast laser pulses in Si.

Subject Keywords

Silicon, Laser, Infrared, Ultrafast, Microsphere, Multiphoton absorption

URI

https://hdl.handle.net/11511/54053

Collections

Department of Physics, Conference / Seminar

Suggestions

OpenMETU
Core

Wideband long wave infrared metamaterial absorbers based on silicon nitride ÜSTÜN, Kadir; Sayan, Gönül (2016-11-28) In this paper, we present silicon nitride metamaterial absorber designs that accomplish large bandwidth and high absorption in the long wave infrared (LWIR) region. These designs are based on the metal-insulator-metal topology, insulator (silicon nitride), and the top metal (aluminum) layers are optimized to obtain high absorptance values in large bandwidths, for three different silicon nitride based absorber structures. The absorption spectrum of the final design reaches absorptance values above 90% in the...
A Dual-Wavelength Pulsed Laser Processing Platform for a-Si Thin Film Crystallization Türker, Volkan; Yağcı, Mahmut Emre; Salman, Sarper Haydar; Çınar, Kamil; Eken, Semih Koray; Bek, Alpan (2019-06-01) Interest in laser crystallization (LC) of silicon (Si) thin films has been on the rise in fabrication of polycrystalline silicon (pc-Si) based thin/ultrathin photovoltaic solar cells and Si based thin film transistors (TFT). Laser based fabrication of device quality pc-Si thin films at room temperature is expected to be a key enabling technology because of its low energy, material and process time budget. Fabrication of high-quality pc-Si thin films without pre-/post-treatment at large is a disruptive techn...
Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses ROSINSKI, MARCİN; BADZIAK, JAN; CZARNECKA, ANNA; GASİOR, PİETR; PARYS, PİETR; PISAREK, MARCİN; Turan, Raşit; WOLOWSKI, JERY; Yerci, Selçuk (2006-08-01) Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.
Low-cost uncooled infrared detector arrays in standard CMOS Eminoglu, S; Tanrikulu, MY; Akın, Tayfun (2003-04-25) This paper reports the development of a low-cost 128 x 128 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated CMOS p(+)-active/n-well diodes. The FPA is fabricated using a standard 0.35 mum CMOS process followed by simple post-CMOS bulk micromachining that does not require any critical lithography or complicated deposition steps; and therefore, the cost of the uncooled FPA is almost equal to the cost of the CMOS chip. The post-CMOS fabrication steps include an RIE etching to...
An Automated calibration set up for laser beam positioning systems in visual inspection applications Kiraz, Ercan; Dölen, Melik; Department of Mechanical Engineering (2013) In this study, a calibration setup for laser beam positioning systems used in visual inspection applications in industry is designed and manufactured. The laser positioning systems generate movable parallel laser lines on the projection surface. There are several translational and angular error sources affecting the positioning accuracy of the laser lines on the projection surface. Especially, since the laser line positioning error caused by angular error sources increases with the distance between the lase...

Citation Formats

F. İdikut, S. E. Seyedpour, and A. Bek, “Subsurface Silicon Processing by Microsphere Focusing of Ultrafast Infrared Laser,” 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/54053.