Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Subsurface Silicon Processing by Microsphere Focusing of Ultrafast Infrared Laser
Date
2019-01-01
Author
İdikut, Fırat
Seyedpour, S. Esmaeilzad
Bek, Alpan
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
203
views
0
downloads
Cite This
Attention on applications of femtosecond lasers in semiconductor materials processing is ever growing. There has been an increasing research momentum especially towards multi-photon absorption based silicon (Si) processing with infrared lasers in the last decade. Since Si is transparent at wavelengths >1.1 mu m, the processing inside Si is triggered by the nonlinear optical phenomenon of two or more photon absorption which requires laser amplitude to reach and pass beyond threshold conditions. A method that utilizes back-reflection at the Si-air interface was developed and demonstrated to be useful for subsurface processing of Si at the micro-scale. In previous studies, pixels of such processed regions were limited to 5-10 mu m size despite use of high numerical aperture lenses due to strong refraction of light in Si. In order to deem the laser processing of Si useful for photonic applications, pixel size needed to be reduced down to a micron or below. In this work, we demonstrate subsurface modification of Si using microsphere based focusing of a 1.5 mu m wavelength ultrafast laser pulses in Si.
Subject Keywords
Silicon
,
Laser
,
Infrared
,
Ultrafast
,
Microsphere
,
Multiphoton absorption
URI
https://hdl.handle.net/11511/54053
Collections
Department of Physics, Conference / Seminar
Suggestions
OpenMETU
Core
Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses
ROSINSKI, MARCİN; BADZIAK, JAN; CZARNECKA, ANNA; GASİOR, PİETR; PARYS, PİETR; PISAREK, MARCİN; Turan, Raşit; WOLOWSKI, JERY; Yerci, Selçuk (2006-08-01)
Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.
A Dual-Wavelength Pulsed Laser Processing Platform for a-Si Thin Film Crystallization
Türker, Volkan; Yağcı, Mahmut Emre; Salman, Sarper Haydar; Çınar, Kamil; Eken, Semih Koray; Bek, Alpan (2019-06-01)
Interest in laser crystallization (LC) of silicon (Si) thin films has been on the rise in fabrication of polycrystalline silicon (pc-Si) based thin/ultrathin photovoltaic solar cells and Si based thin film transistors (TFT). Laser based fabrication of device quality pc-Si thin films at room temperature is expected to be a key enabling technology because of its low energy, material and process time budget. Fabrication of high-quality pc-Si thin films without pre-/post-treatment at large is a disruptive techn...
Three dimensional crystalline silicon solar cells
Baytemir, Gülsen; Turan, Raşit; Department of Physics (2018)
Three-dimensional crystalline silicon solar cells have been attracting attention with its remarkable electrical and optical performance. In this geometry, nano/micropillars allow minority carrier collection in the radial direction and shorten the path length of the photogenerated carriers. Furthermore, with appropriate geometry of the pillars the solar cell efficiency is enhanced due to the reduced surface reflectance and increased light harvesting. Throughout this study, metal assisted etching (MAE), a top...
Metamaterial based wideband infrared absorbers
Üstün, Kadir; Sayan, Gönül; Department of Electrical and Electronics Engineering (2017)
In this thesis, design and simulation of wideband metamaterial absorbers are investigated in the long wave infrared (LWIR) and the mid-wave infrared (MWIR) bands of the electromagnetic spectrum. Use of LWIR and MWIR bands in absorber design is especially important for critical applications including the design of thermal cameras and thermal emitters. Integration of metamaterial topologies into the absorber structures provides flexibilities in design to enhance the operation efficiency of these devices by in...
Low-cost uncooled infrared detector arrays in standard CMOS
Eminoglu, S; Tanrikulu, MY; Akın, Tayfun (2003-04-25)
This paper reports the development of a low-cost 128 x 128 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated CMOS p(+)-active/n-well diodes. The FPA is fabricated using a standard 0.35 mum CMOS process followed by simple post-CMOS bulk micromachining that does not require any critical lithography or complicated deposition steps; and therefore, the cost of the uncooled FPA is almost equal to the cost of the CMOS chip. The post-CMOS fabrication steps include an RIE etching to...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
F. İdikut, S. E. Seyedpour, and A. Bek, “Subsurface Silicon Processing by Microsphere Focusing of Ultrafast Infrared Laser,” 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/54053.