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Development of X-Band Transceiver MMIC's Using GaN Technology
Date
2019-01-01
Author
Memioglu, Onur
Kazan, Oguz
Turan, Isinsu
Karakuzulu, Alper
Gundel, Adnan
Kocer, Fatih
Aydın Çivi, Hatice Özlem
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/ receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain. Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.
Subject Keywords
High-Power
,
Switch
URI
https://hdl.handle.net/11511/56288
Journal
ADVANCED ELECTROMAGNETICS
DOI
https://doi.org/10.7716/aem.v8i2.1012
Collections
Department of Electrical and Electronics Engineering, Article
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O. Memioglu et al., “Development of X-Band Transceiver MMIC’s Using GaN Technology,”
ADVANCED ELECTROMAGNETICS
, pp. 1–9, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/56288.