Development of X-Band Transceiver MMIC's Using GaN Technology

2019-01-01
Memioglu, Onur
Kazan, Oguz
Turan, Isinsu
Karakuzulu, Alper
Gundel, Adnan
Kocer, Fatih
Aydın Çivi, Hatice Özlem
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/ receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain. Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.
ADVANCED ELECTROMAGNETICS

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Citation Formats
O. Memioglu et al., “Development of X-Band Transceiver MMIC’s Using GaN Technology,” ADVANCED ELECTROMAGNETICS, pp. 1–9, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/56288.