Spatio-temporal dynamics of femtosecond laser pulses at 1550 nm wavelength in crystal silicon

Date

2018-08-01

Author

Kadan, Viktor
Pavlova, Svitlana
Pavlov, Ihor
Rezaei, Hossein
Ilday, Omer
Blonskyi, Ivan

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

221
views

0
downloads

Spatio-temporal transformation of the femtosecond laser pulses at 1550 nm wavelength in c-Si is observed using the methods of time-resolved microscopy. The temporal dynamics of the pulse manifests itself both in widening of the frequency spectrum and in the change of on-axis time-width. It is shown, that along with Kerr effect, two-photon absorption also contributes to the temporal reshaping of the laser pulse. Despite the fact that absorption length for green light in c-Si is as small as 1 A mu m, generation of visible third harmonics was also observed in c-Si.

Subject Keywords

General Materials Science, General Chemistry

URI

https://hdl.handle.net/11511/57037

Journal

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

DOI

https://doi.org/10.1007/s00339-018-1986-6

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe Hasanlı, Nızamı; Ozkan, H (Wiley, 2001-01-01) Raman spectra of GaSe layered crystal have been measured using a He-Ne laser and temperature tuning the free-to-bound gap in the range 10-290 K. Resonance enhancement of E'((12)) mode has been observed for both incident and scattered photon energies equal to the free-to-bound transition energy.
Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals Goksen, K.; Hasanlı, Nızamı; Turan, Raşit (Wiley, 2006-08-01) Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nun (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm(-2) range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located...
Optical anisotropy in GaSe Seyhan, A; Karabulut, O; Akınoğlu, Bülent Gültekin; Aslan, B; Turan, Raşit (Wiley, 2005-09-01) Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k perpendicular to c) and parallel to the c-axis (k//c). Peak...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Dispersive optical constants and temperature tuned band gap energy of Tl2InGaS4 layered crystals Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (IOP Publishing, 2007-06-27) The optical properties of Tl2InGaS4 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 400-1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.35 and 2.54 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma =...

Citation Formats

V. Kadan, S. Pavlova, I. Pavlov, H. Rezaei, O. Ilday, and I. Blonskyi, “Spatio-temporal dynamics of femtosecond laser pulses at 1550 nm wavelength in crystal silicon,” APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, pp. 0–0, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57037.