The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures

Altindal, S.
Parlaktuerk, F.
Tataroglu, A.
Parlak, Mehmet
Sarmasov, S. N.
Agasiev, A. A.
The Bi4Ti3O12 (BTO) thin film were fabricated on an n-type Si substrate and annealed by rapid thermal annealing methods. The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Au/Bi4Ti3O12/SiO2/n-Si metal-ferroelectric-insulator-semiconductor (MFIS) structures was investigated by taking the effects of series resistance (R-s) and interface states (N-ss) in the temperature range of 80-400 K. Both the density of interface states N-ss and series resistance R-s were found to be strongly temperature dependent. It is observed that the C-V and G/omega-V plots exhibit anomalous peaks at forward bias because of the influences of N-ss and R-s. It has been experimentally determined that these peak positions shift from accumulation to inversion region, and the maximum values of the capacitance (C) and conductance (G) generally increase with temperature. Also, the distribution profile of R-s-V shows a peak in the accumulation region. The effect of R-s on the C and G is more pronounced in the studied temperature range. The experimental C-V-T and G/omega-V-T characteristics of MFIS structures show the expected behavior due to N-ss in equilibrium with the semiconductor. The temperature dependent C-V and G/omega-V characteristics confirm that the R-s and N-ss play an important role and strongly affect the electrical parameters of MRS structure.


Bayrakli, O.; Gullu, H. H.; Parlak, Mehmet (World Scientific Pub Co Pte Lt, 2018-07-01)
This work indicates the device properties of polycrystalline p-AgGaInTe2 (AGIT) thin films deposited on bare and ITO-coated glass substrates with thermal evaporation technique. Device characteristics of n-CdS/p-AGIT heterostructure have been analyzed in terms of current-voltage (I-V) for different temperatures and capacitance-voltage (C-V) measurements for different frequencies, respectively. The series and shunt resistances were determined from the analysis of parasitic resistance for high forward and reve...
Gullu, H. H.; Parlak, Mehmet (World Scientific Pub Co Pte Lt, 2020-01-01)
Zn-In-Se thin films were fabricated on the ultrasonically cleaned glass substrates masked with clover-shaped geometry by thermal evaporation of its elemental sources. Temperature-dependent conductivity characteristics of the films were investigated under dark and illuminated conditions. The semiconductor type of the films was found as n-type by thermal probe test. According to the van der Pauw technique, the dark electrical conductivity analyses showed that the variations of conductivity of unannealed and a...
Özenbaş, Ahmet Macit (Elsevier BV, 1990-01-01)
The crystallization of amorphous selenium (a-Se) films prepared by vacuum deposition at < 10−5torr onto aluminum substrates at 20°C was examined. The amorphous-to-crystalline transition was obtained by annealing the films between 70–85°C. The crystalline structures resulting from annealing at different temperatures have been identified by SEM (Scanning Electron Microscopy). X-ray and TEM (Transmission Electron Microscopy) studies revealed that these crystals were of hexagonal structure. The thicknesses of t...
Effects of gold-induced crystallization process on the structural and electrical properties of germanium thin films
Kabacelik, Ismail; Kulakci, Mustafa; Turan, Raşit; ÜNAL, NURİ (Wiley, 2018-07-01)
Gold-induced (Au-) crystallization of amorphous germanium (-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films ...
Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films
Karaman, Mehmet; ÖZMEN, ÖZGE TÜZÜN; Sedani, Salar Habibpur; Ozkol, Engin; Turan, Raşit (Wiley, 2016-12-01)
In this work, polycrystalline silicon (poly-Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al-doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly-Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation an...
Citation Formats
S. Altindal, F. Parlaktuerk, A. Tataroglu, M. Parlak, S. N. Sarmasov, and A. A. Agasiev, “The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures,” VACUUM, pp. 1246–1250, 2008, Accessed: 00, 2020. [Online]. Available: