Bayrakli, O.
Gullu, H. H.
Parlak, Mehmet
This work indicates the device properties of polycrystalline p-AgGaInTe2 (AGIT) thin films deposited on bare and ITO-coated glass substrates with thermal evaporation technique. Device characteristics of n-CdS/p-AGIT heterostructure have been analyzed in terms of current-voltage (I-V) for different temperatures and capacitance-voltage (C-V) measurements for different frequencies, respectively. The series and shunt resistances were determined from the analysis of parasitic resistance for high forward and reverse bias voltages, respectively. The ideality factors were evaluated from I-V variation at each sample temperature as lying in between 2.51 and 3.25. The barrier height was around 0.79 eV at room temperature. For low bias region, the variation in the diode parameters due to the sample temperature exhibited the thermionic emission with T-0 anomaly, whereas space-charge-limited current analysis was also found to be pre-dominant carrier transport mechanism for this heterostructure. From C-V measurements, the obtained built-in potential and series resistances were found to be in good agreement with I-V results.


Gullu, H. H.; Parlak, Mehmet (World Scientific Pub Co Pte Lt, 2020-01-01)
Zn-In-Se thin films were fabricated on the ultrasonically cleaned glass substrates masked with clover-shaped geometry by thermal evaporation of its elemental sources. Temperature-dependent conductivity characteristics of the films were investigated under dark and illuminated conditions. The semiconductor type of the films was found as n-type by thermal probe test. According to the van der Pauw technique, the dark electrical conductivity analyses showed that the variations of conductivity of unannealed and a...
Effects of gold-induced crystallization process on the structural and electrical properties of germanium thin films
Kabacelik, Ismail; Kulakci, Mustafa; Turan, Raşit; ÜNAL, NURİ (Wiley, 2018-07-01)
Gold-induced (Au-) crystallization of amorphous germanium (-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films ...
Structural and optical properties of thermally annealed thallium indium disulfide thin films
Guler, I; Hasanlı, Nızamı (Elsevier BV, 2020-06-30)
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature t...
Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2008-07-01)
In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200-350 K. The data analyses have shown that this crystal exhibits an extrinsic n-type of conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The latter...
Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films
Karaman, Mehmet; ÖZMEN, ÖZGE TÜZÜN; Sedani, Salar Habibpur; Ozkol, Engin; Turan, Raşit (Wiley, 2016-12-01)
In this work, polycrystalline silicon (poly-Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al-doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly-Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation an...
Citation Formats
O. Bayrakli, H. H. Gullu, and M. Parlak, “INVESTIGATION ON DEVICE CHARACTERISTICS OF n-CdS/p-Ag(Ga-In)Te-2 HETEROJUNCTION DIODE,” SURFACE REVIEW AND LETTERS, pp. 0–0, 2018, Accessed: 00, 2020. [Online]. Available: