VISUALIZATION OF ELECTRICAL INHOMOGENEITIES IN HIGH-OHMIC SEMICONDUCTOR PLATES BY AN IONIZATION-TYPE PHOTOGRAPHIC SYSTEM

Date

1994-06-14

Author

LEBEDEVA, NN
SALAMOV, BG
Akınoğlu, Bülent Gültekin
ALLAKHVERDIEV, KR

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

218
views

0
downloads

A device for rapid visualization of electrical and spatial inhomegeneities of a semi-insulating GaAs (rho greater-than-or-equal-to 10(6) OMEGA cm) is described. This visualizer is a modification of the ionization type photographic system in which a semiconducting plate is placed between transparent plane parallel electrodes in the gas discharge cell. The gas discharge gaps are formed between free surfaces of the semiconductor and electrodes. When a voltage is applied to the electrodes a discharge luminescence glows in the gap under uniform infrared illumination of the semiconductor. The uniformity of glowing over the semiconductor area is determined by electrical homogeneity and infrared absorptivity of the material. The main discharge glow patterns on both sides and after chemical etching are similar, which reflects the fact that the structural defects are continuous within the plate. The observed patterns give information about EL2 centres in the GaAs semiconductor. Technical data of the ionization-type visualizer of electrical inhomogeneities in a semiconducting plate are given.

Subject Keywords

Acoustics and Ultrasonics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics

URI

https://hdl.handle.net/11511/35028

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS

DOI

https://doi.org/10.1088/0022-3727/27/6/021

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Perturbation analysis of sheath evolution, with application to plasma source ion implantation Bektursunova, RM; Demokan, O (IOP Publishing, 2001-02-07) A perturbation model has been developed to describe the evolution of an expanding plasma sheath around a cathode after a high-voltage negative pulse is applied to the cathode, simulating the conditions in devices such as those used for plasma source ion implantation. The set of governing equations consists of two coupled collisionless fluid equations for ions, and Poisson's equation and Boltzmann's assumption for electrons. The time-dependent, self-consistent expressions for the potential, ion density and i...
Spatial stabilization of Townsend and glow discharges with a semiconducting cathode Salamov, BG; Ellialtioglu, S; Akınoğlu, Bülent Gültekin; Lebedeva, NN; Patriskii, LG (IOP Publishing, 1996-03-14) The physical processes determining the functions of an ionization system and especially the discharge stabilization by the distributed resistance of a semiconducting cathode in such a system are studied. The current-voltage (I-U) characteristics of the system with a semiconducting GaAs cathode are obtained experimentally as functions of the gap pressure P (16-760 Torr) and inter-electrode distance d (10 mu m to 5 mm), which are varied for the first time over very wide ranges. The experiments showed that the...
Excitonic effects on the nonlinear optical properties of small quantum dots KARABULUT, İBRAHİM; Safak, H.; Tomak, Mehmet (IOP Publishing, 2008-08-07) The excitonic effects on the nonlinear optical properties of small quantum dots with a semiparabolic confining potential are studied under the density matrix formalism. First, within the framework of the strong confinement approximation, we present the excitonic states and then calculate the excitonic effects on the nonlinear optical properties, such as second harmonic generation, third harmonic generation, nonlinear absorption coefficient and refractive index changes. We find the explicit analytical expres...
Photo-stimulated luminescence of calcium co-doped BaFBr : Eu2+ x-ray storage phosphors SCHLAPP, M; Bulur, Enver; VON SEGGERN, H (IOP Publishing, 2003-01-21) The influence of calcium co-doping on the optical properties of the x-ray storage phosphor BaFBr: Eu2+, is determined by photo- stimulated luminescence techniques. It is found that the incorporation of calcium into the lattice results in a broadening of the photo- stimulation peak due to a calcium induced FA(Br, Ca2+)-centre with stimulation maxima at 540 and 680 nm. The optical cross-sections for the photo- stimulated process are determined by utilizing stimulation light with linearly increasing intensity....
Assessment of InSb photodetectors on Si substrates Ozer, S; Beşikci, Cengiz (IOP Publishing, 2003-03-07) We present the detailed characteristics of small area (33 x 33 mum(2)) InSb photodiodes grown on GaAs coated Si substrates by molecular beam epitaxy. In spite of very large lattice mismatch, 80 K peak detectivity of similar to1 x 10(10) cm Hz(1/2) W-1 has been measured under backside illumination without anti-reflection coating. Differential resistance at 80 K is limited by Ohmic leakage under small reverse bias and trap assisted tunnelling (TAT) under moderately large reverse bias. In the temperature range...

Citation Formats

N. LEBEDEVA, B. SALAMOV, B. G. Akınoğlu, and K. ALLAKHVERDIEV, “VISUALIZATION OF ELECTRICAL INHOMOGENEITIES IN HIGH-OHMIC SEMICONDUCTOR PLATES BY AN IONIZATION-TYPE PHOTOGRAPHIC SYSTEM,” JOURNAL OF PHYSICS D-APPLIED PHYSICS, pp. 1229–1232, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35028.