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A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs
Date
2017-07-01
Author
Azarifar, Mohammad
Donmezer, Nazli
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant overestimation of the thermal resistance. In order to take advantage of the computational efficiency of the two-dimensional models, a correction procedure is necessary for the accurate representation of the actual device temperatures. In this paper, a novel correction method is introduced for this purpose. Correction technique presented in this study can be used to improve the accuracy of the multiscale numerical thermal device models.
Subject Keywords
GaN-based HEMTs
,
Temperature
,
Thermal analysis
,
Thermal resistance
URI
https://hdl.handle.net/11511/65920
Journal
MICROELECTRONICS RELIABILITY
DOI
https://doi.org/10.1016/j.microrel.2017.05.020
Collections
Department of Mechanical Engineering, Article
Citation Formats
IEEE
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MLA
BibTeX
M. Azarifar and N. Donmezer, “A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs,”
MICROELECTRONICS RELIABILITY
, vol. 74, pp. 82–87, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65920.