A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs

Azarifar, Mohammad
Donmezer, Nazli
Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant overestimation of the thermal resistance. In order to take advantage of the computational efficiency of the two-dimensional models, a correction procedure is necessary for the accurate representation of the actual device temperatures. In this paper, a novel correction method is introduced for this purpose. Correction technique presented in this study can be used to improve the accuracy of the multiscale numerical thermal device models.


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Citation Formats
M. Azarifar and N. Donmezer, “A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs,” MICROELECTRONICS RELIABILITY, pp. 82–87, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65920.