A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs

Date

2017-07-01

Author

Azarifar, Mohammad
Donmezer, Nazli

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant overestimation of the thermal resistance. In order to take advantage of the computational efficiency of the two-dimensional models, a correction procedure is necessary for the accurate representation of the actual device temperatures. In this paper, a novel correction method is introduced for this purpose. Correction technique presented in this study can be used to improve the accuracy of the multiscale numerical thermal device models.

Subject Keywords

GaN-based HEMTs, Temperature, Thermal analysis, Thermal resistance

URI

https://hdl.handle.net/11511/65920

Journal

MICROELECTRONICS RELIABILITY

DOI

https://doi.org/10.1016/j.microrel.2017.05.020

Collections

Department of Mechanical Engineering, Article

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Citation Formats

M. Azarifar and N. Donmezer, “A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs,” MICROELECTRONICS RELIABILITY, pp. 82–87, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65920.