Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate

Arikan, Bulent
Senel, Onur
We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains 140 period of 8.0 ML InAs/8.3 ML GaSb p-i-n SL structure with a 50% cutoff wavelength of 3.78 pm. We achieved a peak specific detectivity (D*) and differential resistance area product at zero bias (R(0)A) of 1.3 x 10(12)cm Hz(1/2) W-1 and 10(4) Omega cm(2) at 80 K, respectively. The obtained D* value is the best value reported up to now for a T2SL MWIR p-i-n photodetector grown on a GaAs substrate. The crystalline quality and the uniformity of the grown structure were verified by high resolution X-ray diffraction method by measuring three different spots on grown structure on a full 4 inch SI GaAs substrate.


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Citation Formats
U. SERİNCAN, B. Arikan, and O. Senel, “Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate,” SUPERLATTICES AND MICROSTRUCTURES, pp. 15–21, 2018, Accessed: 00, 2020. [Online]. Available: