Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate
Date
2018-08-01
Author
SERİNCAN, UĞUR
Arikan, Bulent
Senel, Onur
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
238
views
0
downloads
Cite This
We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains 140 period of 8.0 ML InAs/8.3 ML GaSb p-i-n SL structure with a 50% cutoff wavelength of 3.78 pm. We achieved a peak specific detectivity (D*) and differential resistance area product at zero bias (R(0)A) of 1.3 x 10(12)cm Hz(1/2) W-1 and 10(4) Omega cm(2) at 80 K, respectively. The obtained D* value is the best value reported up to now for a T2SL MWIR p-i-n photodetector grown on a GaAs substrate. The crystalline quality and the uniformity of the grown structure were verified by high resolution X-ray diffraction method by measuring three different spots on grown structure on a full 4 inch SI GaAs substrate.
Subject Keywords
Electrical and Electronic Engineering
,
General Materials Science
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/67068
Journal
SUPERLATTICES AND MICROSTRUCTURES
DOI
https://doi.org/10.1016/j.spmi.2018.05.020
Collections
Center for Solar Energy Research and Applications (GÜNAM), Article
Suggestions
OpenMETU
Core
Electronic structure of modulation-doped heterostructures: electric field effects
Ilaiwi, KF; El-Kawni, MI; Tomak, Mehmet (Elsevier BV, 1998-01-01)
Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are presented and their dependence on various device parameters are examined. The results of the calculation of the electric field effects on the shape of the confinement potential, the electron concentration and the shape of the wavefunction are presented. (C) 1998 Academic Press.
Enhancement of H-2 Storage in Carbon Nanotubes via Doping with a Boron Nitride Ring
Onay, Aytun Koyuncular; Erkoç, Şakir (American Scientific Publishers, 2009-04-01)
Hydrogen storage capacity of carbon nanotubes with different chirality have been investigated by performing quantum chemical methods at semiempirical and DFT levels of calculations. It has been found that boron nitrite substitutional doping increases the hydrogen storage capacity of carbon nanotubes.
Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals
KARABULUT, ORHAN; Parlak, Mehmet; Turan, Raşit; SERİNCAN, UĞUR; Akınoğlu, Bülent Gültekin (Wiley, 2006-03-01)
The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increa...
Synthesis and optical properties of fused aromatic thienopyrazine based pi-conjugated polymers
Kolay, Merve; Tarkuc, Simge; Udum, Yasemin Arslan; Toppare, Levent Kamil (IOP Publishing, 2011-07-01)
Two new polythieno[3,4-b]pyrazine derivatives, poly-10,12-bis(4-hexylthiophen-2-yl)dibenzo[f,h]thieno[3,4-b]quinoxaline (PDBTQ) and poly-8,10-bis(4-hexylthiophen-2-yl)acenaphtho[1,2-b]thieno[3,4-e]pyrazine (PATP) were synthesized by electrochemical polymerization and their electrochemical properties reported. Electroactivity of the monomer and electrochemical redox behavior of its polymers were investigated by cyclic voltammetry. Spectroelectrochemical analysis was performed and the band gaps of the polymer...
Synthesis of aromatic poly(pyridinium salt)s and their electrochromic properties
Keshtov, M. L.; UDUM, YASEMİN; Toppare, Levent Kamil; Kochurov, V. S.; Khokhlov, A. R. (Elsevier BV, 2013-05-15)
Synthesis of a series of new conjugated electrochromic polymeric pyridinium salts containing main-chain triphenylamine and their electrochromic properties were demonstrated. All polymers exhibit intense UV absorptions at 336-338 nm in DMF and 340-343 nm in thin film form and fluorescence centered at 410-438 nm in DMF and 460-461 nm in thin film form. The electrochromic properties of the films were investigated by electrochemical and spectroelectrochemical methods. Reversible redox signals with stable electr...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
U. SERİNCAN, B. Arikan, and O. Senel, “Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate,”
SUPERLATTICES AND MICROSTRUCTURES
, pp. 15–21, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67068.