Electronic structure of modulation-doped heterostructures: electric field effects

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1998-01-01

Author

Ilaiwi, KF
El-Kawni, MI
Tomak, Mehmet

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Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are presented and their dependence on various device parameters are examined. The results of the calculation of the electric field effects on the shape of the confinement potential, the electron concentration and the shape of the wavefunction are presented. (C) 1998 Academic Press.

Subject Keywords

Electrical and Electronic Engineering, General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42789

Journal

SUPERLATTICES AND MICROSTRUCTURES

DOI

https://doi.org/10.1006/spmi.1996.0443

Collections

Department of Physics, Article

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Citation Formats

K. Ilaiwi, M. El-Kawni, and M. Tomak, “Electronic structure of modulation-doped heterostructures: electric field effects,” SUPERLATTICES AND MICROSTRUCTURES, pp. 61–67, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42789.