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Electronic structure of modulation-doped heterostructures: electric field effects

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1998-01-01
Ilaiwi, KF
El-Kawni, MI
Tomak, Mehmet
Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are presented and their dependence on various device parameters are examined. The results of the calculation of the electric field effects on the shape of the confinement potential, the electron concentration and the shape of the wavefunction are presented. (C) 1998 Academic Press.