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Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx : H/p-Si structure
Date
2007-09-15
Author
Oezdemir, Orhan
Atilgan, Ismail
Katircioglu, Bayram
Metadata
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Admittance (Y-m) versus applied gate bias (V-G) on MIS structure (Cr/a-SiNx:H/p-Si) was measured as a function of frequency (mHzMHz)/ternperature (77-400 K) as parameters to investigate minority carrier behavior. Strong frequency dispersion in measured capacitance at inverting gate bias (positive biases for p-type silicon substrate) and low frequency behavior in capacitance-voltage (C-PI curves under high measuring frequencies (above kHz) at 300-400 K temperature interval are reported. This phenomenon is interpreted via lateral hopping conductivity of self-inversion charges beyond the gate inside a-SiNx:H film near interface as generation mechanism of minorities with a lower activation energy (0.11 eV) rather than prevailing mechanisms of much higher activation energies (namely, generation-recombination and diffusion).
Subject Keywords
Materials Chemistry
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
,
Ceramics and Composites
URI
https://hdl.handle.net/11511/67091
Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
DOI
https://doi.org/10.1016/j.jnoncrysol.2007.05.024
Collections
Department of Physics, Article
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O. Oezdemir, I. Atilgan, and B. Katircioglu, “Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx : H/p-Si structure,”
JOURNAL OF NON-CRYSTALLINE SOLIDS
, pp. 2751–2757, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67091.