Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx : H/p-Si structure

Oezdemir, Orhan
Atilgan, Ismail
Katircioglu, Bayram
Admittance (Y-m) versus applied gate bias (V-G) on MIS structure (Cr/a-SiNx:H/p-Si) was measured as a function of frequency (mHzMHz)/ternperature (77-400 K) as parameters to investigate minority carrier behavior. Strong frequency dispersion in measured capacitance at inverting gate bias (positive biases for p-type silicon substrate) and low frequency behavior in capacitance-voltage (C-PI curves under high measuring frequencies (above kHz) at 300-400 K temperature interval are reported. This phenomenon is interpreted via lateral hopping conductivity of self-inversion charges beyond the gate inside a-SiNx:H film near interface as generation mechanism of minorities with a lower activation energy (0.11 eV) rather than prevailing mechanisms of much higher activation energies (namely, generation-recombination and diffusion).


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Citation Formats
O. Oezdemir, I. Atilgan, and B. Katircioglu, “Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx : H/p-Si structure,” JOURNAL OF NON-CRYSTALLINE SOLIDS, pp. 2751–2757, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67091.