Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content

Date

2011-03-01

Author

SEL, KIVANÇ
AKAOĞLU, BARIŞ
Atilgan, Ismail
Katircioglu, Bayram

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

204
views

0
downloads

Hydrogenated amorphous silicon carbide (a-SiCx:H) films of different carbon content (x) were deposited by radio frequency plasma enhanced chemical vapor deposition (PECVD) system. Apart from the X-ray photoelectron spectroscopy (XPS) and UV-Visible transmission analyses, the resistivity measurements between 293 K and 450 K were emphasized to assess the eventual transport mechanisms. The film resistivities are unexpectedly found relatively low, especially for high carbon content. In the frame of exclusive band conduction, the apparent thermal activation energies, evaluated from Arrhenius type plot remain too low compared to half values of the optical gaps.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/67630

Journal

SOLID-STATE ELECTRONICS

DOI

https://doi.org/10.1016/j.sse.2010.12.010

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films Karaman, Mehmet; ÖZMEN, ÖZGE TÜZÜN; Sedani, Salar Habibpur; Ozkol, Engin; Turan, Raşit (Wiley, 2016-12-01) In this work, polycrystalline silicon (poly-Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al-doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly-Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation an...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01) The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
Effect of the number of cycles on the optical and structural properties of Mn3O4 nanostructures obtained by SILAR technique BAYRAM, ÖZKAN; Simsek, Onder; GÜNEY, HARUN; İĞMAN, ERDAL; Ozer, Mustafa Murat (Springer Science and Business Media LLC, 2018-06-01) In this study, nanostructured Mn3O4 (manganese oxide) thin films were successfully obtained by successive ionic layer adsorption and reaction (SILAR) method on the soda lime glass substrates using Manganese Nitrate (Mn(NO3)(2)) and Ammonium hydroxide (NH4(OH)) as cationic and anionic precursors respectively. Structural and morphological characterizations of the Mn3O4 films obtained at different cycles were determined using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The crystal structure...
Effect of thermal neutron irradiation in boron-doped melt-textured YBCO superconductors Topal, U; Dorosinskii, L; Ozkan, H; Yavuz, H (Elsevier BV, 2003-05-01) Y1.6Ba2.3Cu3.3Ox superconductors with different amounts of boron doping have been synthesized using the MPMG technique. Undoped and boron-doped samples were irradiated with thermal neutrons to study the effect of defects produced by the fission reaction, B(n,alpha)Li, on the pinning and the critical current. We observed that the pinning and the critical current density were improved as a result of thermal neutron irradiation. This improvement was slightly stronger for the boron-doped samples compared to the...
Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2020-08-01) SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were presented according to results of applied structural techniques. Optical studies of SnS2 thin films were accomplished by Raman spectroscopy and transmission methods. Raman spectrum exhibited two modes around 198 and 320 cm−1. Transmittance data obtained for various temperatures between 10...

Citation Formats

K. SEL, B. AKAOĞLU, I. Atilgan, and B. Katircioglu, “Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content,” SOLID-STATE ELECTRONICS, pp. 1–8, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67630.