Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering

Isik, M.
Gullu, H. H.
Terlemezoglu, M.
Surucu, O. Bayrakli
Parlak, Mehmet
Hasanlı, Nızamı
SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were presented according to results of applied structural techniques. Optical studies of SnS2 thin films were accomplished by Raman spectroscopy and transmission methods. Raman spectrum exhibited two modes around 198 and 320 cm−1. Transmittance data obtained for various temperatures between 10 and 300 K were analyzed to reveal various optical characteristics like band gap energy, variation rate of gap energy with temperature, average phonon energy, gap energy at absolute zero. Band gap energy of SnS2 thin films were reported as 2.18 and 2.22 eV at 300 and 10 K, respectively. The temperature-band gap energy dependency was analyzed taking into account the Varshni and O'Donnell-Chen models.


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In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined ...
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The Cu-In-Zn-Se thin film was synthesized by changing the contribution of In in chalcopyrite CuInSe2 with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu-In-Zn-Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the (112) direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation becam...
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Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01)
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Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01)
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Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
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In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Citation Formats
M. Isik, H. H. Gullu, M. Terlemezoglu, O. B. Surucu, M. Parlak, and N. Hasanlı, “Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering,” PHYSICA B-CONDENSED MATTER, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: