Electroformed silicon nitride based light emitting memory device

Date

2017-07-31

Author

ANUTGAN, TAMİLA
ANUTGAN, MUSTAFA
ATILGAN, İSMAİL
Katircioglu, Bayram

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED. Published by AIP Publishing.

Subject Keywords

DIODE

URI

https://hdl.handle.net/11511/67825

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.4997029

Collections

Department of Physics, Article

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Citation Formats

T. ANUTGAN, M. ANUTGAN, İ. ATILGAN, and B. Katircioglu, “Electroformed silicon nitride based light emitting memory device,” APPLIED PHYSICS LETTERS, pp. 0–0, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67825.