Bright Visible Light Extraction from Amorphous Silicon Nitride Heterojunction Pin Diode

Date

2011-01-01

Author

ANUTGAN, TAMİLA
ANUTGAN, MUSTAFA
ATILGAN, İSMAİL
Katircioglu, B.

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We report the transformation of an ordinary hydrogenated amorphous silicon nitride based heterojunction pin diode into a strong visible light emitting electroluminescent device. This forming process (FP) comprises Joule heating induced crystallization during the application of sufficiently high forward bias to the fresh diode. FP starts at an arbitrary point and continues until the accompanying visible light is uniformly emitted from the whole diode. This remarkable phenomenon is presented by real-time photography of the lateral propagation of the formed region. Finally, both the role of window electrode for a successful FP and the luminescence mechanism after FP are briefly discussed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3592232] All rights reserved.

Subject Keywords

Physical and Theoretical Chemistry, Electrical and Electronic Engineering, Electrochemistry, General Materials Science, General Chemical Engineering

URI

https://hdl.handle.net/11511/67854

Journal

ELECTROCHEMICAL AND SOLID STATE LETTERS

DOI

https://doi.org/10.1149/1.3592232

Collections

Department of Physics, Article

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Citation Formats

T. ANUTGAN, M. ANUTGAN, İ. ATILGAN, and B. Katircioglu, “Bright Visible Light Extraction from Amorphous Silicon Nitride Heterojunction Pin Diode,” ELECTROCHEMICAL AND SOLID STATE LETTERS, pp. 0–0, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67854.