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Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

2019-04-01
Genc, M.
Sheremet, V.
Elci, M.
KASAPOĞLU, Ahmet Emre
ALTUNTAŞ, İSMAİL
DEMİR, İLKAY
Egin, G.
Islamoglu, S.
Gür, Emre
Muzafferoglu, N.
ELAGÖZ, SEZAİ
GÜLSEREN, Oğuz
AYDINLI, ATİLLA
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.