Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Effect of heat treatment on the stress and structure evolution of plasma deposited boron nitride thin films
Date
2008-03-25
Author
Anutgan, T. Aliyeva
Anutgan, M.
Wdemir, O.
Atilgan, I.
Katircioglu, B.
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
35
views
0
downloads
Cite This
Boron nitride (BN) thin films are deposited at 573 K by plasma enhanced chemical vapor deposition (PECVD) with ammonia (NH3) and hydrogen diluted diborane (15% B2H6 in H-2) source gases. UV-visible and Fourier transform infrared (FTIR) spectroscopies together with surface profilometry are used for the film characterization. These films are hydrogenated (BN:H) whose hydrogen content is pursued following the 1.5 h annealing process at 748 K, 923 K and 1073 K under nitrogen atmosphere. Hydrogen escape with the rising annealing temperature is observed together with increases of the compressive stress, band gap and Urbach energies. Films are composed of the hexagonal BN (h-BN) clusters that grow dominantly parallel to the substrate surface with some non-parallel planes at the edges of the clusters, which are embedded in an amorphous tissue (the so-called turbostratic structure, t-BN). Annealing seems to promote non-parallel planes, thus creating more stressful and distorted network. Most of hydrogen atoms are removed from the film annealed at 1073 K and wurtzite BN (w-BN) phase is formed with volume fraction of 57%. As a consequence or in parallel of hydrogen reduction, high compressive stress causes the cracking of the films.
Subject Keywords
Materials Chemistry
,
General Chemistry
,
Surfaces, Coatings and Films
,
Surfaces and Interfaces
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/68182
Journal
SURFACE & COATINGS TECHNOLOGY
DOI
https://doi.org/10.1016/j.surfcoat.2007.11.008
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Effects of gold-induced crystallization process on the structural and electrical properties of germanium thin films
Kabacelik, Ismail; Kulakci, Mustafa; Turan, Raşit; ÜNAL, NURİ (Wiley, 2018-07-01)
Gold-induced (Au-) crystallization of amorphous germanium (-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films ...
Effect of low-energy electron irradiation on (Bi, Pb)-2212 superconductors
Ogun, SE; Goktas, H; Ozkan, H; Hasanlı, Nızamı (Elsevier BV, 2005-06-22)
The effect of low-energy electron irradiation on the properties of the Bi-based superconductors is studied. Two sets of polycrystalline (Bi, Pb)-2212 samples were synthesized by heating the appropriate mixtures of powders at 840 degrees C for 100 h, then quenched or furnace cooled to room temperature. The samples were irradiated by low-energy (1-10 keV), pulsed (20 ns) electron beam up to a dose of 6.2 x 10(15) cm(-2). X- ray diffraction patterns, resistance-temperature behaviours, critical currents, and mi...
Effect of hydrogenation on B/Si(001)-(1 x 2)
Cakmak, M.; Mete, E.; Ellialtıoğlu, Süleyman Şinasi (Elsevier BV, 2007-09-15)
Ab initio calculations, based on pseudopotentials and density functional theory, have been performed to investigate the effect of hydrogenation on the atomic geometries and the energetics of substitutional boron on the generic Si(001)-(1 x 2) surface. For a single B atom substitution corresponding to 0.5 ML coverage, we have considered two different sites: (i) the mixed Si-B dimer structure and (ii) boron substituting for the second-layer Si to form Si-B back-bond structure, which is energetically more favo...
Effect of oxygen flow rate on the low temperature deposition of titanium monoxide thin films via electron beam evaporation
Cosar, Mustafa Burak; Icli, Kerem Cagatay; Ozenbas, Macit (American Vacuum Society, 2019-05-01)
In this study, titanium monoxide thin films were evaporated by an electron beam source under different oxygen atmospheres at deposition temperatures not exceeding 80 degrees C. Deposition of thin films at low temperatures is a prerequisite for heat sensitive substrates. XRD results showed that crystallinity of titanium monoxide is achieved without the requirement of high temperature annealing. When oxygen is introduced into the coating chamber, a titanium peak is formed at exactly the Ti+2 position together...
Wrinkling of graphene because of the thermal expansion mismatch between graphene and copper
Ogurtani, Omer Tarik; Senyildiz, Dogukan; Buke, Goknur Cambaz (Wiley, 2018-05-01)
Well-defined bundles of wrinkles are observed on the graphene-covered copper by using atomic force microscopy after chemical vapor deposition process. Their numerical analyses are performed by employing a set of formula deduced from classical elasticity theory of bent thin films with clamped boundary conditions. Here they are imposed by the banks of trenches associated with the reconstructed copper substrate surfaces, which suppress lateral movements of graphene monolayers and induce local biaxial stress. T...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
T. A. Anutgan, M. Anutgan, O. Wdemir, I. Atilgan, and B. Katircioglu, “Effect of heat treatment on the stress and structure evolution of plasma deposited boron nitride thin films,”
SURFACE & COATINGS TECHNOLOGY
, pp. 3058–3066, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68182.