Kara, Dogacan
Donmezer, Nazli
Canan, Talha Furkan
ÖZBAY, Ekmel
Field plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power densities, GaN HEMTs suffer significantly from the concentrated heating effects in a small region called hotspot located closer to the drain edge of the gate. Although; the stabilizing effect of field plate on the electrical field distribution in HEMTs is known by researchers, its effect on temperature distribution and the hotspot temperature is still not studied to a greater extend. For this purpose, finite element thermal modelling of devices with different sizes of field plates are performed using the joule heating distribution data obtained from 2D electrical simulations. Results obtained from such combined model show that the existence of a field plate changes the electrical field, therefore the heat generation distribution within device. Moreover; increasing the size of the field plate has an effect on the maximum temperature at the hotspot region. The results are used to analyze these effects and improve usage of field plates for high electron mobility transistors to obtain better temperature profiles.


Electrothermal Analysis of the Field-Plated AIGaN/GaN HEMTs with SiO2 Passivation
Kara, Dogacan; AKGÜN, FATMA NAZLI DÖNMEZER (2017-09-01)
AlGaN/GaN high electron mobility transistors (HEMTs) are widely used in high frequency and power applications of the space and military industries due to their high RF power densities. When operated in full capacity, reliability of GaN HEMTs drop significantly due to device degradation, electron collapse phenomena, and concentrated heating effects. Although significant research has been done to investigate the effects of passivation, field-plates on the device degradation and the electron collapse separatel...
Effects of pressure and electric field on the charge transport mechanisms in the silver-modified-zeolite porous microstructure
Koc, Sevgul Ozturk; Koseoglu, Kivilcim; Galioglu, Sezin; Akata Kurç, Burcu; SALAMOV, BAHTİYAR (2016-03-15)
The electrical properties and charge transport mechanisms for nanoporous natural zeolite of clinoptilolite and its silver modified form were studied for the first time in a wide gas pressure range (4-760 Torr) and electric field strength (50-350 kV/cm) at room temperature using two different cell configurations. One of the used cells contained a gas discharge gap, which allowed investigating the electronic conduction route in zeolite cathodes (ZC) as well. The influence of pressure, electric field and cell ...
Development of a large area germanium on insulator platform by liquid phase epitaxy
Özyurt, Zişan İrem; Yerci, Selçuk; Department of Micro and Nanotechnology (2017)
Germanium is a group IV element compatible with CMOS (Complementary metal oxide semiconductor) fabrication technology and advantageous over silicon by having smaller band gap and higher carrier mobility, which provide infrared photodetectors and high-speed transistors respectively. In addition, by having direct band gap, strained-Ge enables fabrication of infrared lasers. Finally, thanks to lattice-matching, Ge layers on Si can also be used as virtual substrates for the growth of III-V compounds on Si. In o...
Impact of rapid thermal annealing on impurities removal efficiency from silicon carbide for optoelectronic applications
Barbouche, M.; Zaghouani, R. Benabderrahmane; Benammar, N. E.; Khirouni, K.; Turan, Raşit; Ezzaouia, H. (Springer Science and Business Media LLC, 2019-11-27)
Impurities are of crucial interest in optoelectronic devices as they affect carrier lifetimes and electrical properties. In view of that, it is important to incorporate certain processing steps to reduce impurities effect on final devices. The aim of this work is to enhance silicon carbide SiC purity for silicon passivation. Low cost method of SiC purification is presented. This method combines three main steps consisting of formation of porous silicon carbide layers by acid vapor etching followed by a phot...
Influence of Phase Magnetic Couplings on Phase Current Characteristics of Multiphase BLDC Machines with Overlapping Phase Windings
Bostancı, Emine; Plikat, Robert (2015-09-01)
Multiphase brushless dc (BLDC) machines are implemented in electric and hybrid electric vehicle applications due to their high torque/power density, good fault tolerance capability, and low torque ripple. Moreover, the per-phase converter rating can be reduced by increasing the phase number. However, the number of magnetic couplings between phases increases with the phase number, and these magnetic couplings can have an important influence on the machine performance. Therefore, they need to be considered in...
Citation Formats
D. Kara, N. Donmezer, T. F. Canan, Ö. ŞEN, and E. ÖZBAY, “EFFECTS OF FIELD PLATE ON THE MAXIMUM TEMPERATURE AND TEMPERATURE DISTRIBUTION FOR GaN HEMT DEVICES,” 2016, p. 0, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68074.