Studies on Device Properties of n ZnSe p Si Heterojunction Diode T P1 63

Date

2016-05-05

Author

Güllü, Hasan Hüseyin
Bayraklı, Özge
Coşkun, Emre
Parlak, Mehmet

Metadata

Show full item record

Item Usage Stats

65
views

0
downloads

URI

https://hdl.handle.net/11511/73046

Collections

Unverified, Conference / Seminar

Suggestions

OpenMETU
Core

Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode KALELİ, Murat; Parlak, Mehmet; Ercelebi, C. (2011-10-12) In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current-voltage (I-V), and photo-response measurements carried out in the temperature range of 200-360 K. In order to obtain the series resistance (R...
Studies on processing parameters of high-permeability manganese-zinc ferrite ceramics Kayıhan, Ağça Bağcan; Timuçin, Muharrem; Department of Metallurgical and Materials Engineering (2001)
Investigations on nature of re-volatilization from atom trap surfaces in flame AAS Korkmaz, D; Kumser, S; Ertas, N; Mahmut, M; Ataman, Osman Yavuz (2002-01-01) Some experiments were designed and performed in order to elucidate the mechanism of re-volatilization in silica traps using flame AAS. A water-cooled U-shaped silica trap and a slotted silica tube trap were used, while organic solvent aspiration was employed for re-volatilization. Analytes were Bi, Au, Mn, Cd and Pb. The detailed experiments have shown that heating is not necessarily associated with re-volatilization: however, a direct contact between flame and active silica surface is required. The effect ...
Study on the electrical properties of ZnSe/Si heterojunction diode Gullu, H. H.; Bayrakli, O.; Yildiz, D. E.; Parlak, Mehmet (2017-12-01) ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The forward bias I-V characteristics were analyzed in the temperature range of 220-360 K. The fabricated diode structure exhibited rectifying characteristics with a two order rectification ratio. The current transport in the junction was modeled by the modification of ...
Studies on photochemical vapor generation of selenium Çetmeli , Melis; Ertaş, Gülay; Department of Chemistry (2019) Selenium is a significant trace element for human health. Selenium can be essential or toxic for human body depending on its concentration. Within the scope of this thesis, photochemical vapor generation tungsten coil atomization technique has been studied for the determination of selenium. Volatile selenium compounds were generated by exposure of UV light of the solution containing selenium and acetic acid. To increase sensitivity of photochemical vapor generation system, the technique was combined with tu...

Citation Formats

H. H. Güllü, Ö. Bayraklı, E. Coşkun, and M. Parlak, “Studies on Device Properties of n ZnSe p Si Heterojunction Diode T P1 63,” 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/73046.