Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode

Date

2011-10-12

Author

KALELİ, Murat
Parlak, Mehmet
Ercelebi, C.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

231
views

0
downloads

In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current-voltage (I-V), and photo-response measurements carried out in the temperature range of 200-360 K. In order to obtain the series resistance (R-s) and shunt resistance (R-sh) values, the parasitic resistance (R-p = partial derivative V/partial derivative I) was analyzed for forward and reverse voltages. Devices showed very good diode behavior with the rectification factor of about 10(4) at 1.0 V in dark. The ideality factor n and the barrier height phi(b) values of the heterojunction diode were determined by performing different I-V plots. A space charge limited current method was used to determine the conduction mechanism at a high bias region. Spectral photo-response analyses showed a shifting of the band edge to the lower energies with increasing temperature.

Subject Keywords

Film solar-cells, Aginse2 thin-films, E-beam technique, Electrical-properties, Optical-absorption, Cu(in,ga)se-2, Electrodeposition, Semiconductors, Insulators, Efficiency

URI

https://hdl.handle.net/11511/33146

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/26/10/105013

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of optical parameters of thermally evaporated ZnSe thin films Gullu, H. H.; Coşkun, Emre; Parlak, Mehmet (2015-04-29) In this work, zinc selenide (ZnSe) thin films were deposited by thermal evaporation method using pure elemental (Zn and Se) sources. The physical properties of the films have been investigated in terms of the structural and optical characterizations depending on the post-annealing process under nitrogen atmosphere in the temperature between 300 and 500 degrees C for 30 min. The structural and compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy...
Investigation of physical properties of quaternary AgGa0.5In0.5Te2 thin films deposited by thermal evaporation Karaagac, H.; Parlak, Mehmet (Elsevier BV, 2010-8) The aim of this study is to understand the structural, optical and photo-electrical properties of the quaternary chalcogenide AgGa 0.5In0.5Te2 thin films deposited onto the glass substrates by thermal evaporation of the single crystalline powder. Energy dispersive X-ray analysis (EDXA) showed remarkable change in atomic percentage of the constituent elements after annealing. The X-ray diffraction (XRD) of the films below the annealing temperature of 300°C indicated the polycrystalline structure with co-exis...
Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films Coskun, EMRE; Gullu, H. H.; Parlak, Mehmet; Ercelebi, C. (2015-02-01) The structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dep...
Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2015-06-01) Silver-induced crystallizations of amorphous germanium (alpha-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization (SPC) of alpha-Ge films was investigated for various post-annealing temperatures between 300 and 500 degrees C for 60 min. Two crystallization approaches were compared: SPC and metal-induced crystallization (MIC). The structural properties o...
Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films Gullu, H. H.; Parlak, Mehmet (2016-05-01) In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...

Citation Formats

M. KALELİ, M. Parlak, and C. Ercelebi, “Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 0–0, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33146.