An Uncooled Microbolometer Infrared Detector in any Standard CMOS Technology

Download

index.pdf

Date

1999-06-10

Author

Tezcan, Deniz Sabuncuoğlu
Koçer, Fatih
Akın, Tayfun

Metadata

Show full item record

Item Usage Stats

112
views

92
downloads

This paper reports a new microbolometer structure with the CMOS n-well layer as the active element. The n-well structures are suspended and thermally isolated by post-etching of fabricated and bonded CMOS chips, while the n-well regions are protected from etching by the electrochemical etch-stop technique in a TMAH solution. The characterization results of the fabricated chips show that the n-well has a TCR value of 0.50%/K at 300K in a commercial 0.8mm CMOS process. Detailed thermal simulations in ANSYS were performed to obtain an optimized structure. These results and calculations show that it is possible to implement a microbolometer structure with a responsivity of 4000 V/W and a detectivity of 1.2x109 cmHz1/2/W with a thermal time constant of 3.2 msec. This approach is very cost-effective to produce large focal plane arrays in CMOS for uncooled infrared imaging with reasonable performance.

URI

https://hdl.handle.net/11511/76959

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

An uncooled microbolometer infrared focal plane array in standard CMOS Tezcan, Ds; Eminoglu, S; Akar, Os; Akın, Tayfun (2001-01-24) This paper reports implementation of a low-cost microbolometer focal plane array using n-well layer in a CMOS process as the microbolometer material. N-well microbolometer structures are suspended for thermal isolation by postetching of fabricated CMOS dies using silicon bulk-micromachining techniques. Although n-well has a moderate TCR of 0.5-0.65 %/K at 300 K, it still provides a reasonable performance due to its single crystal structure which contributes low 1/f noise. Detailed thermal simulations in ANS...
An integrated thermopile structure with high responsivity using any standard CMOS process Olgun, Z; Akar, O; Külah, Haluk; Akin, T (1997-01-01) This paper reports a new thermopile structure using n-poly/p(+)-active layers that are available in any CMOS technology. The thermopile structures are obtained by post-etching of the fabricated and bonded chips. P+-active layers are placed in n-well regions, which are protected from etching by electrochemical etch-stop technique in a TMAH solution. The characterization results show that Seebeck coefficients of the n-poly and p(+)-active layers are -335 mu V/K and 450 mu V/K, respectively. Tests show that a ...
An integrated thermopile structure with high responsivity using any standard CMOS process Akın, Tayfun; Akar, Orhan; Külah, Haluk (1998-04-01) This paper reports a new thermopile structure using n-poly/p(+)-active layers that are available in any CMOS technology. The thermopile structures are obtained by post-etching of the fabricated and bonded chips. P+-active layers are placed in n-well regions, which are protected from etching by the electrochemical etch-stop technique in a TMAH solution. The n-well regions are then removed using a short EDP etching to reduce the thermal conductivity of the suspended structures, improving the responsivity sign...
An infrared FPA readout circuit based on Current Mirroring Integration Külah, Haluk; Akın, Tayfun (1999-01-01) This paper reports an improved Current Mirroring Integration (CMI) unit cell and a new readout structure based on it. The new structure combines the benefits of the current mirroring direct injection and switch current integration structures, satisfying the requirements for the high resolution and high performance IR FPA readouts. The improved CMI readout circuit provides very high injection efficiency, almost-zero detector bias, and large dynamic range, while it can be implemented in a small pixel area. th...
A low-power robust humidity sensor in a standard CMOS process Okcan, Burak; Akın, Tayfun (2007-11-01) This paper presents a low-cost thermal-conductivity-based humidity sensor implemented using a 0.6-mu m CMOS process, where suspended p-n junction diodes are used as the humidity-sensitive elements. The measurement method uses the difference between the thermal conductivities of air and water vapor at high temperatures by comparing the output voltages of two hea ted and thermally isolated diodes; one of which is exposed to the environment and has a humidity-dependent thermal conductance, while the other is s...

Citation Formats

D. S. Tezcan, F. Koçer, and T. Akın, “An Uncooled Microbolometer Infrared Detector in any Standard CMOS Technology,” 1999, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/76959.