Fabrication and Electrical Characterization of p-AgGa0.5In0.5Te2 Thin Film Heterostructure with Cd-Free Front Layer

Bayraklı, Özge
Güllü, Hasan Hüseyin
Terlemezoğlu, Makbule
Yıldız, Dilber Esra
Parlak, Mehmet


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Upconversion is a growing research topic as it can be utilized in various applications extending from traditional fields, such as solar cells, and infrared sensing to novel fields, including bioimaging and 3D displays. However, heavy halides, which are frequently used as upconversion host matrices in the literature, exhibit unstable chemical, mechanical, and thermal properties. Oxides with high stability can be used as an alternative to heavy halides, but their high phonon energy reduces upconversion effici...
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In this study, copper oxide (CuO) thin film/silicon (Si) nanowire heterojunctions have been fabricated and their optoelectronic performances have been investigated. Vertically aligned n-type Si nanowires have been fabricated using metal-assisted etching (MAE) technique. CuO thin films were synthesized by the sol-gel method and deposited onto the nanowires through spin-coating. Fabricated nanowire heterojunction devices exhibited excellent diode behaviour compared to the planar heterojunction control device....
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Type-II superlattice detectors with nBn structure made it possible to detect at higher temperatures due to the suppressing of the dark current components originating from Shockley-Read-Hall (SRH). In this context, the Al(x)Ga(1-x)Sb layer with wider band-gap energy was designed to act as an electron barrier between the n-doped N-Structure InAs/AlSb/GaSb type-II superlattice layers, whose active layers are capable of dual-color detection at mid-wavelength. In this thesis work, the fabrication processes of th...
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Citation Formats
Ö. Bayraklı, H. H. Güllü, M. Terlemezoğlu, D. E. Yıldız, and M. Parlak, “Fabrication and Electrical Characterization of p-AgGa0.5In0.5Te2 Thin Film Heterostructure with Cd-Free Front Layer,” 2018, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77364.