Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes

Date

2014-02-12

Author

AKGÜL, GÜVENÇ
AKSOY, FUNDA
Mulazimoglu, Emre
Ünalan, Hüsnü Emrah
Turan, Raşit

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In this study, copper oxide (CuO) thin film/silicon (Si) nanowire heterojunctions have been fabricated and their optoelectronic performances have been investigated. Vertically aligned n-type Si nanowires have been fabricated using metal-assisted etching (MAE) technique. CuO thin films were synthesized by the sol-gel method and deposited onto the nanowires through spin-coating. Fabricated nanowire heterojunction devices exhibited excellent diode behaviour compared to the planar heterojunction control device. The rectification ratios were found to be 105 and 101 for nanowire and planar heterojunctions, respectively. The improved electrical properties and photosensitivity of the nanowire heterojunction diode was observed, which was related to the three-dimensional nature of the interface between the Si nanowires and the CuO film. Results obtained in this work reveal the potential of Si nanowire-based heterojunctions for various optoelectronic devices.

Subject Keywords

Acoustics and Ultrasonics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics

URI

https://hdl.handle.net/11511/48301

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS

DOI

https://doi.org/10.1088/0022-3727/47/6/065106

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

G. AKGÜL, F. AKSOY, E. Mulazimoglu, H. E. Ünalan, and R. Turan, “Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes,” JOURNAL OF PHYSICS D-APPLIED PHYSICS, pp. 0–0, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48301.