A CMOS visible image sensor array using current mirroring integration readout circuitry

Download

index.pdf

Date

2000-08-30

Author

Akbay, Selim Sermet
Bircan, A.
Akın, Tayfun

Metadata

Show full item record

Item Usage Stats

237
views

92
downloads

This paper reports the development of a CMOS visible sensor array using a high performance readout circuit called Current Mirroring Integration (CMI). The sensor element is a photodiode implemented using n-well and p+ -active layers available in any CMOS process. The current generated by optical excitation is mirrored and integrated in an off-pixel capacitor using the CMI readout circuit, which provides high injection efficiency, low input impedance, almost-zero and stable detector bias, and a high dynamic range. A 16x16 test array is fabricated using a 0.8µm CMOS process. Each detector pixel in the array occupies a 50µm x 50µm area with a fill factor of 60%. Operation of the fabricated test array is verified, and the output dynamic range is measured as 0.5V to 4.8V

Subject Keywords

Visible image sensors, Readout electronics, CMOS sensors

URI

https://hdl.handle.net/11511/77608

Conference Name

European Conf. on Solid-State Transducers (Eurosensors XIV), (27 - 30 Ağustos 2000)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

A current mirroring integration based readout circuit for high performance infrared FPA applications Külah, Haluk; Akın, Tayfun (2003-04-01) This paper reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution infrared focal plane array (FPA) applications. The circuit uses a feedback structure with current mirrors to provide stable bias voltage across the photodetector diode, while mirroring the diode current to an integration capacitor. The integration capacitor can be placed outside of the unit pixel, reducing the pixel area and allowing to integrate the current on larger capacitance for larger charge storage capac...
A CMOS n-well microbolometer FPA with temperature coefficient enhancement circuitry Eminoglu, S; Tezcan, DS; Akın, Tayfun (2001-04-20) This paper reports the development of a low-cost CMOS microbolometer focal plane array with a new temperature coefficient enhancement readout circuit. We have recently reported an uncooled microbolometer detector that uses the CMOS n-well layer as the active material, where the suspended and thermally isolated n-well structure is obtained by silicon bulk micromachining of fabricated CMOS dies. In addition, we have successfully fabricated a 16x16 n-well microbolometer FPA. Although n-well is single crystal s...
A low-cost 128x128 uncooled infrared detector array in CMOS process Eminoglu, Selim; Tanrikulu, Mahmud Yusuf; Akın, Tayfun (2008-02-01) This paper discusses the implementation of a low-cost 128 x 128 uncooled infrared microbolometer detector array together with its integrated readout circuit (ROC) using a standard 0.35 mu m n-well CMOS and post-CMOS MEMS processes. The detector array can be created with simple bulk-micromachining processes after the CMOS fabrication, without the need for any complicated lithography or deposition steps. The array detectors are based on suspended p(+)-active/n-well diode microbolometers with a pixel size of 4...
A CMOS current mirroring integration readout structure for infrared focal plane arrays Külah, Haluk; Akın, Tayfun (1998-09-24) This paper reports a new, high performance CMOS readout structure, called Current Mirroring Integration (CMI), for high-resolution infrared Focal Plane Array (FPA) applications. Using the integration capacitance outside the FPA, the unit cell area is decreased, making the circuit suitable for high-resolution applications. Moreover, the readout circuit offers high injection efficiency, perfect (almost-zero) detector bias, and large dynamic range in a small pixel area. The circuit provides a maximum charge st...
An uncooled microbolometer infrared focal plane array in standard CMOS Tezcan, Ds; Eminoglu, S; Akar, Os; Akın, Tayfun (2001-01-24) This paper reports implementation of a low-cost microbolometer focal plane array using n-well layer in a CMOS process as the microbolometer material. N-well microbolometer structures are suspended for thermal isolation by postetching of fabricated CMOS dies using silicon bulk-micromachining techniques. Although n-well has a moderate TCR of 0.5-0.65 %/K at 300 K, it still provides a reasonable performance due to its single crystal structure which contributes low 1/f noise. Detailed thermal simulations in ANS...

Citation Formats

S. S. Akbay, A. Bircan, and T. Akın, “A CMOS visible image sensor array using current mirroring integration readout circuitry,” Copenhagen, Denmark, 2000, p. 21, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77608.