A CMOS visible image sensor array using current mirroring integration readout circuitry

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Date

2000-08-30

Author

Akbay, Selim Sermet
Bircan, A.
Akın, Tayfun

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This paper reports the development of a CMOS visible sensor array using a high performance readout circuit called Current Mirroring Integration (CMI). The sensor element is a photodiode implemented using n-well and p+ -active layers available in any CMOS process. The current generated by optical excitation is mirrored and integrated in an off-pixel capacitor using the CMI readout circuit, which provides high injection efficiency, low input impedance, almost-zero and stable detector bias, and a high dynamic range. A 16x16 test array is fabricated using a 0.8µm CMOS process. Each detector pixel in the array occupies a 50µm x 50µm area with a fill factor of 60%. Operation of the fabricated test array is verified, and the output dynamic range is measured as 0.5V to 4.8V

Subject Keywords

Visible image sensors, Readout electronics, CMOS sensors

URI

https://hdl.handle.net/11511/77608

Conference Name

European Conf. on Solid-State Transducers (Eurosensors XIV), (27 - 30 Ağustos 2000)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

S. S. Akbay, A. Bircan, and T. Akın, “A CMOS visible image sensor array using current mirroring integration readout circuitry,” Copenhagen, Denmark, 2000, p. 21, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77608.