A CMOS current mirroring integration readout structure for infrared focal plane arrays

Date

1998-09-24

Author

Külah, Haluk
Akın, Tayfun

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This paper reports a new, high performance CMOS readout structure, called Current Mirroring Integration (CMI), for high-resolution infrared Focal Plane Array (FPA) applications. Using the integration capacitance outside the FPA, the unit cell area is decreased, making the circuit suitable for high-resolution applications. Moreover, the readout circuit offers high injection efficiency, perfect (almost-zero) detector bias, and large dynamic range in a small pixel area. The circuit provides a maximum charge storage capacity of 5.25×10 7 electrons and a maximum transimpedance of 6×10 7 Ω for a 2pF integration capacitance and 5V power supply. The unit-cell employs only nine MOS transistors and occupies an area of 20µm × 25µm in a 0.8µm CMOS process.

Subject Keywords

Detectors, Circuits, Preamplifiers, Decision support systems, Capacitance, Feedback amplifiers, Night vision, Night vision, Readout electronics, Dark current, Noise reduction

URI

https://hdl.handle.net/11511/46408

DOI

https://doi.org/10.1109/esscir.1998.186310

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

H. Külah and T. Akın, “A CMOS current mirroring integration readout structure for infrared focal plane arrays,” 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46408.