Wafer Level Au Sn TLP Bonding from Eutectic Composition



Wafer-Level Low-Temperature Solid-Liquid Inter-Diffusion Bonding With Thin Au-Sn Layers for MEMS Encapsulation
Temel, Oguzhan; Kalay, Yunus Eren; Akın, Tayfun (Institute of Electrical and Electronics Engineers (IEEE), 2020-01-01)
IEEEA novel solid-liquid inter-diffusion (SLID) bonding process is developed allowing to use thin layers of the Au-Sn material in wafer-level microelectromechanical systems (MEMS) packaging while providing a good bonding strength. The bond material layers are designed to have a robust bond material configuration and a metallic bond with a high re-melting temperature, which is an important advantage of SLID bonding or with its alternative name, transient liquid phase (TLP) bonding. The liquid phase in SLID b...
Wafer level hermetic sealing of MEMS devices with vertical feedthroughs using anodic bonding
Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2015-04-01)
This paper presents a new method for wafer-level hermetic packaging of MEMS devices using a relatively low temperature anodic bonding technique applied to the recently developed advanced MEMS (aMEMS) process. The aMEMS process uses vertical feedthroughs formed on an SOI cap wafer, eliminating the need for any complex via-refill or trench-refill steps while forming the vertical feedthroughs. The hermetic sealing process is achieved at 350 degrees C by using an anodic bonding potential of 600 V. The bonding p...
Wafer level hermetic encapsulation of MEMS inertial sensors using SOI cap wafers with vertical feedthroughs
Mert Torunbalci, Mustafa; Alper, Said Emre; Akın, Tayfun (2014-02-26)
This paper reports a new, inherently simple, and high-yield wafer-level hermetic encapsulation method developed for MEMS inertial sensors, enabling lead transfer using vertical feedthroughs that do not require any complex via-refill or trench-refill processes. The process requires only seven masks to complete both the sensor and cap wafers, whereas the combined yield for the sealing and lead transfer is experimentally verified to be above 90%. Hermetic encapsulation is achieved by Au-Si eutectic bonding, an...
Wafer level vacuum packaging of mems sensors and resonators
Torunbalcı, Mustafa Mert; Akın, Tayfun; Arıkan, Mehmet Ali Sahir; Department of Micro and Nanotechnology (2011)
This thesis presents the development of wafer level vacuum packaging processes using Au-Si eutectic and glass frit bonding contributing to the improvement of packaging concepts for a variety of MEMS devices. In the first phase of this research, micromachined resonators and pirani vacuum gauges are designed for the evaluation of the vacuum package performance. These designs are verified using MATLAB and Coventorware finite element modeling tool. Designed resonators and pirani vacuum gauges and previously dev...
Grain boundary strengthening in dilute nanocrystalline Cu alloys
Özerinç, Sezer; Vo, Nhon; Averback, Robert; Bellon, Pascal; Dillon, Shen; King, William (null; 2011-11-28)
Citation Formats
S. Yılmaz, O. Temel, T. Akın, and Y. E. Kalay, “Wafer Level Au Sn TLP Bonding from Eutectic Composition,” 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77972.